Semiconductor device and method for fabricating the same
View Patent ↗The semiconductor device includes an active region, a recess channel region, a storage node junction region, a gate insulating film, and a gate electrode. The active region is defined by a device isolation structure formed in a semiconductor substrate, wherein a lower part of sidewalls of the active region is recessed. The recess channel is formed in the semiconductor substrate under the active region, wherein the recess channel has a vertical channel region and a horizontal channel region. The storage node junction region is formed over the device isolation structure and the semiconductor substrate. The gate insulating film is formed over the active region including the recess channel region. The gate electrode is formed over the gate insulating film to fill up the recess channel region.
1. A semiconductor device comprising:
a device isolation structure formed in a semiconductor substrate to define an active region, wherein an upper sidewall of the device isolation structure is sloped toward the active region and a lower sidewall of the device isolation structure is sloped away from the active region;
a trench formed in the active region, wherein the trench includes a lower portion and an upper portion, the lower portion being wider than the upper portion;
a recess channel region formed in the semiconductor substrate in the active region between the trench and the device isolation structure, wherein a thickness of an upper portion of the active region between the upper portion of the trench and the device isolation structure is greater than a thickness of a lower portion of the active region between the upper portion of the trench and the device isolation structure;
a storage node junction region formed over the device isolation structure and the semiconductor substrate;
a gate insulating film formed over the active region including the sidewalls of the trench; and
a gate electrode formed over the gate insulating film to fill up the trench.
2. The semiconductor device according to claim 1 , wherein a thickness of the storage node junction region over the device isolation structure is equal to or less than that of the storage node junction region over the semiconductor substrate.