Semiconductor structure and method of manufacture

1. A method of forming a structure, comprising:

providing a substrate including a first epitaxial layer;

forming a first subcollector in the first epitaxial layer;

forming a second epitaxial layer over the first epitaxial layer;

forming, over the first subcollector, stacked reachthroughs in the first epitaxial layer, wherein the second epitaxial layer is linked to the first subcollector; and

after a portion of each stacked reachthrough is formed, forming a second subcollector in the second epitaxial layer above the first subcollector, the second subcollector being arranged between and in contact with the stacked reachthroughs,

wherein portions of the stacked reachthroughs act as a border for an implanted N-well region arranged above the second subcollector, and

wherein the method prevents CMOS latch-up.

2. The method of claim 1 , wherein the second subcollector is arranged under a first device and a second device, and wherein:

the first device is the N-well and the second device is the P-well;

each stacked reachthrough contacts the first subcollector and the second subcollector to form a resistive path, and

the second device is a complementary metal oxide semiconductor.

3. The method of claim 1 , wherein the first subcollector is a deep subcollector buried in a first region of a dual epitaxial layer defined by the substrate and the first epitaxial layer and the first epitaxial layer of the dual epitaxial layer, the deep subcollector and the stacked reachthroughs form an isolated p-well region.

4. The method of claim 1 , wherein the second subcollector is formed by:

forming the first epitaxial layer over the substrate;

forming a photoresist layer over the first epitaxial layer;

opening a window in the photoresist layer;

performing an ion implantation process to form the second subcollector; and

forming the second epitaxial layer over the first epitaxial layer, wherein the second subcollector grows up into the second epitaxial layer.

5. The method of claim 1 , wherein the second subcollector is formed substantially in parallel with the near subcollector to form parallel subcollector low-resistance paths.

6. The method of claim 1 , wherein the stacked reachthrough extends through the first epitaxial layer and the second epitaxial layer to the first subcollector.

7. A method of forming a multi-circuit structure, comprising:

forming a deep subcollector in a first region such that the formed structure will utilize the deep subcollector under one or more of a first device and a second device;

covering the deep subcollector with at least one epitaxial layer;

forming a near subcollector in a second region under the second device, the near subcollector being formed in a higher region under the second device than the deep subcollector, and extending into a second epitaxial layer; and

before the near subcollector is formed, forming at least one reachthrough which, after the near subcollector is formed, provides a resistive path electrically connecting the deep subcollector and the near subcollector,

wherein the first device is a P-well and the second device is an N-well,

wherein at least one of:

portions of two of the at least one reachthrough act as a border for the N-well; and

the deep subcollector is formed under the P-well and not under the N-well, and

wherein the method prevents CMOS latch-up and the reachthroughs do not extend below the deep subcollector.

8. The method of claim 7 , wherein the second device is a complementary metal oxide semiconductor device.

9. The method of claim 7 , further comprising forming at least two reachthroughs extending on sides of the second device configured to prevent latch-up conditions.

10. The method of claim 7 , further comprising forming three reachthroughs, wherein a middle reachthrough of the three reachthroughs isolates the first device from the second device.

11. The method of claim 7 , wherein the at least one reachthrough is a stacked structure formed from a second reachthrough stacked on a first reachthrough.

12. The method of claim 7 , wherein the at least one reachthrough extends at least partially through at least two epitaxial layers to the deep subcollector.

13. The method of claim 7 , further comprising shallow isolation regions formed in the first region and the second region, the at least one reachthrough contacting the shallow isolation regions of the second device.

14. A method of forming a structure, comprising:

forming a first epitaxial layer over a first subcollector;

forming first, second and third reachthroughs in the first epitaxial layer, wherein at least two of the first, second, and third reachthroughs provide a conductive channel or low resistance connection to the first subcollector;

after the first, second, and third reachthroughs are formed, forming a second subcollector in contact with the second and third reachthroughs; and

forming a second epitaxial layer over the first, second, and third reachthroughs and the second subcollector,

wherein at least one of:

portions of the second and third reachthroughs act as a border for an implanted N-well arranged above the second subcollector; and

the first subcollector is formed under the first and second reachthroughs and under a P-well and not under an N-well.

15. The method of claim 14 , wherein the method prevents CMOS latch-up, wherein the first, second, and third reachthroughs eliminate lateral bipolar gain.

16. The method of claim 14 , wherein the method prevents a highly conductive path between an NMOS part and a PMOS part of a CMOS structure.

17. The method of claim 14 , wherein the first and second subcollectors are merged together within the first epitaxial layer.

18. The method of claim 14 , further comprising forming shallow trench isolation structures in the second epitaxial layer, wherein each shallow trench isolation structure is integrated with the first, second, and third reachthroughs.

19. The method of claim 1 , further comprising a P-well region arranged adjacent the N-well region, wherein the P-well region lacks any second subcollector between the P-well region and the first subcollector.

20. The method of claim 19 , wherein portions of the stacked reachthroughs act as a border for the P-well region.