IP Library Granted Patent US 7,498,115
Granted Patent B2
US 7,498,115 · App. 11/294,816 · Granted Mar 3, 2009

Photoresist compositions

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,498,115
App. No.
11/294,816
Granted
Mar 3, 2009
Kind
B2
Abstract

Photoresists of the invention contain an added acid reaction component together with one or more resins and a photoactive component. Preferred photoresists of the invention can provide processes substrates such as microelectronic wafers with desired iso-dense bias values. Particularly preferred photoresists of the invention are chemically-amplified positive-acting resists and contain an ester-based solvent such as ethyl lactate or propylene glycol methyl ether acetate in addition to the acid reaction component.

Claims (15)

1. A photoresist composition comprising:

i) one or more resins;

ii) one or more photoacid generator compounds; and

iii) wherein the ethyl lactoyl lactate is present in an amount of at least 0.05 weight percent base don total solids of the photoresist composition.

2. The photoresist of claim 1 wherein the photoresist comprises a solvent component that comprises ethyl lactate.

3. A method of forming a photoresist relief image comprising:

(a) applying a coating layer of a photoresist composition of claim 1 on a substrate;

(b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

4. An article of manufacture having on at least one surface a coating layer of the photoresist composition of claim 1 .

5. The photoresist of claim 1 wherein the photoresist comprises a solvent component that comprises propylene glycol methyl ether acetate.

6. A method of forming a photoresist relief image comprising steps of:

(a) admixing components comprising ethyl lactoyl lactate, a solvent component, one or more resins, and one or more photoacid generator compounds to provide a photoresist composition, and wherein ethyl lactoyl lactate is added to an admixture comprising a solvent component

(b) after said admixing components of step (a), adding ethyl lactoyl lactate to the admixture comprising a solvent component;

(c) after adding ethyl lactoyl lactate to the photoresist composition in step (b), applying a coating layer of the photoresist composition on a substrate;

(d) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Oct 29, 2024
From: ROHM & HAAS ELECTRONIC MATERIALS LLC
To: DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC
Reel/Frame 069272/0383 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 17, 2006
From: MINTZ, JOAN M.; KAUFMAN, MICHAEL J.; JESSIMAN, NORMAN S.
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 017795/0196 →