Semiconductor components having through wire interconnects (TWI)
A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire. A system for fabricating the semiconductor component includes a bonding capillary configured to place the wire in the via, and to form a bonded connection between the wire and the substrate contact.
1. A semiconductor component comprising:
a semiconductor substrate having an integrated circuit, a first side, a substrate contact on the first side in electrical communication with the integrated circuit, a second side, and a via extending through the substrate contact from the first side to the second side; and
a through wire interconnect on the substrate comprising a wire in the via, a bonded connection on the substrate contact between the wire and the substrate contact, and a contact on the wire proximate to the second side.
2. The semiconductor component of claim 1 wherein the through wire interconnect further comprises a bonding member bonded to the wire and to the substrate contact configured to secure the wire to the substrate contact and to provide a bonding structure for bonding to the through wire interconnect.
3. The semiconductor component of claim 1 further comprising a dielectric material in the via surrounding the wire.
4. The semiconductor component of claim 1 wherein the contact on the wire comprises a ball on an end of the wire.
5. The semiconductor component of claim 1 wherein the contact on the wire comprises an exposed surface on an end of the wire.
6. The semiconductor component of claim 1 wherein the bonded connection comprises a ball bond or a wedge bond.
7. The semiconductor component of claim 1 wherein the wire comprises a ribbon wire and the bonded connection comprises a ribbon wire bond.
8. The semiconductor component of claim 1 wherein the wire comprises a compressed wire and the bonded connection comprises a bonding flange on the compressed wire.
9. The semiconductor component of claim 1 further comprising a second substrate stacked on the semiconductor substrate having a second through wire interconnect bonded to the through wire interconnect.
10. The semiconductor component of claim 1 wherein the bonded connection comprises the wire between a first bump and a second bump.
11. The semiconductor component of claim 1 further comprising a bonding member bonded to the wire and to the substrate contact and a cap member encapsulating the bonding member.
12. The semiconductor component of claim 1 further comprising an insulating layer in the via or on the wire.
13. The semiconductor component of claim 1 wherein the through wire interconnect has a co-axial configuration with a co-axial conductor in the via electrically insulated from the wire.
14. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate contact and the substrate extending from the first side to the second side;
a wire in the via having a contact thereon proximate to the second side;
a bonded connection between the wire and the substrate contact; and
a bonding member on the wire and the substrate contact configured to secure the wire to the substrate contact and to provide a bonding structure for bonding to the through wire interconnect.
15. The semiconductor component of claim 14 wherein the bonding member comprises a stud bump, a ball bump or a solder ball.
16. The semiconductor component of claim 14 wherein the bonded connection comprises a ball bond, a wedge bond or a ribbon wire bond formed between the bonding member and the substrate contact.
17. The semiconductor component of claim 14 wherein the bonded connection comprises a bond formed between the bonding member and the wire.
18. The semiconductor component of claim 14 wherein the wire comprises a compressed wire and the bonded connection comprises a stud bump, a ball bump or a solder ball on the compressed wire.
19. The semiconductor component of claim 14 wherein the semiconductor substrate comprises a thinned semiconductor die.
20. The semiconductor component of claim 14 further comprising a terminal contact on the first side in electrical communication with the bonding member.
21. The semiconductor component of claim 14 further comprising an insulating layer in the via or on the wire configured to insulate the wire from the semiconductor substrate.
22. The semiconductor component of claim 14 further comprising an encapsulant in the via encapsulating the wire.
23. The semiconductor component of claim 14 further comprising an insulating layer on the second side having an opening aligned with the contact.
24. The semiconductor component of claim 14 further comprising a polymer button on the second side encapsulating the contact.
25. The semiconductor component of claim 14 wherein the contact on the wire comprises a ball contact on an end of the wire.
26. The semiconductor component of claim 14 wherein the contact on the wire comprises an exposed planar surface of the wire proximate to the second side.
27. The semiconductor component of claim 14 wherein the via is offset in x and y directions from a center of the substrate contact.
28. The semiconductor component of claim 14 wherein the via comprises a slot and the wire comprises a ribbon wire.
29. The semiconductor component of claim 14 wherein the via has a depth of from 10 μm to 125 μm and the wire comprises a compressed wire in the via having an end formed as a stud bump bonded to the substrate contact.
30. A semiconductor component comprising:
a semiconductor substrate having a circuit side, a back side, an integrated circuit, a substrate contact in electrical communication with the integrated circuit; and
a through wire interconnect on the semiconductor substrate configured to provide a conductive path from the substrate contact to the second side and a structure for bonding the substrate to a second substrate, the through wire interconnect comprising a via through the substrate contact and the substrate to the second side, a wire in the via, a contact on the wire in the via proximate to the second side, a bonded connection between the wire and the substrate contact, and a bonding member on the wire and the substrate contact.
31. The semiconductor component of claim 30 wherein the bonded connection comprises a ball bond or a wedge bond and the bonding member comprises a bump on the substrate contact.
32. The semiconductor component of claim 30 wherein the bonding member comprises a double bump on the substrate contact and the bonded connection comprises a bond between the wire and the double bump.
33. The semiconductor component of claim 30 wherein the bonding member comprises a first bump and a second bump and the bonded connection is located between the first bump and the second bump.
34. The semiconductor component of claim 30 wherein the bonded connection comprises a ribbon wire bond and the bonding member comprises a bump on the ribbon wire bond.
35. The semiconductor component of claim 30 further comprising an encapsulant encapsulating the wire in the via.
36. The semiconductor component of claim 30 further comprising a second semiconductor substrate on the semiconductor substrate having a second through wire interconnect bonded to the through wire interconnect.
37. The semiconductor component of claim 30 further comprising a second semiconductor substrate on the semiconductor substrate having a bumped contact bonded to the through wire interconnect.
38. The semiconductor component of claim 30 further comprising a plurality of through wire interconnects and a plurality of terminal contacts in an area array in electrical communication with the through wire interconnects.
39. The semiconductor component of claim 30 wherein the semiconductor substrate comprises a thinned die.
40. The semiconductor component of claim 30 further comprising an insulating layer on the second side having an opening aligned with the contact.
41. The semiconductor component of claim 30 further comprising an electrically conductive cap member on the bonding member and the substrate contact.
42. The semiconductor component of claim 30 further comprising a polymer button on the second side encapsulating the contact.
43. The semiconductor component of claim 30 wherein the contact comprises a ball or a planar surface of the wire.
44. The semiconductor component of claim 30 wherein the bonding member covers the bonded connection.
45. The semiconductor component of claim 30 wherein the bonded connection is formed by the bonding member.
46. A semiconductor component comprising:
a semiconductor substrate having a first side, a substrate contact on the first side, and a second side;
a via in the substrate contact and the substrate extending from the first side to the second side;
a wire in the via having a contact thereon proximate to the second side;
a bonded connection between the wire and the substrate contact configured to secure the wire to the substrate contact and to provide a bonding structure for bonding to the through wire interconnect; and
a co-axial conductor in the via electrically insulated from the wire.
47. The semiconductor component of claim 46 wherein the wire includes an insulating layer.
48. The semiconductor component of claim 46 wherein the via includes a second insulating layer electrically insulating the co-axial conductor.
49. A semiconductor component comprising:
a first substrate having a first side, a second side, a substrate contact on the first side, and a via extending through the substrate contact and the substrate from the first side to the second side;
a through wire interconnect on the first substrate comprising a wire in the via, a contact on the wire proximate to the second side, a bonded connection between the wire and the substrate contact, and a bonding member on the wire and the substrate contact; and
a second substrate stacked on the first substrate having a second contact bonded to the contact or to the bonding member.
50. The semiconductor component of claim 49 wherein the first substrate and the second substrate comprise semiconductor dice.
51. The semiconductor component of claim 49 wherein at least one substrate contact is electrically isolated from any integrated circuits on the first substrate.
52. The semiconductor component of claim 49 wherein the second substrate comprises a second through wire interconnect bonded to the contact.
53. The semiconductor component of claim 49 wherein the second substrate comprises a second through wire interconnect having a second bonding member bonded to the bonding member with the first substrate and the second substrate in a face to face configuration.
54. The semiconductor component of claim 49 wherein the second substrate comprises a second through wire interconnect having a second contact bonded to the contact with the first substrate and the second substrate in a back to back configuration.
55. The semiconductor component of claim 49 wherein the bonded connection comprises a ball bond or a wedge bond, and the bonding member comprises a stud bump on the ball bond or the wedge bond.
56. The semiconductor component of claim 49 wherein the wire comprises a ribbon wire, the bonded connection comprises a ribbon wire bond, and the bonding member comprises a stud bump on the ribbon wire bond.