Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
View Patent ↗A process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
1. A plasma enhanced chemical vapor deposition process comprising:
admitting a hydrocarbon gas and a titanium gas into a chamber;
forming a plasma in the chamber having a power level substantially greater than a first ionization energy but less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals therein; and
reacting a material adsorbed on the surface of a substrate with some of the radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium gas for depositing titanium metal on a portion of a surface of the substrate.
2. The process of claim 1 , wherein the hydrocarbon gas is selected from a group of compounds comprising C n H 2n+2 , C n H 2n and C n H 2n−2 .
3. The process of claim 1 , further comprising:
mounting the substrate on a susceptor;
heating the susceptor; and
heating the substrate using the susceptor.
4. The process of claim 1 , wherein the hydrocarbon gas includes a hydrocarbon gas mixed with a carrier gas selected from a group consisting of helium and argon.
5. The process of claim 1 , wherein the chamber comprises a hot wall chamber.
6. The process of claim 1 , wherein the chamber comprises a deposition chamber for maintaining a pressure within a range of about 2 torr to about 100 torr.
7. The process of claim 1 , wherein the chamber comprises a chamber for maintaining a pressure within a preferred range of about 2 torr to about 5 torr.
8. The process of claim 1 , wherein the substrate comprises a semiconductor wafer.
9. The process of claim 1 , wherein the hydrocarbon gas comprises an alkane having fewer than five carbon atoms per molecule.
10. The process of claim 9 , wherein the hydrocarbon gas includes methane.
11. The process of claim 1 , further comprising:
removing reaction products from the chamber during the process.
12. The process of claim 11 , wherein an alkyl chloride gas comprises a reaction product.
13. The process of claim 1 , wherein the titanium gas includes a titanium tetrachioride gas mixed with a carrier gas selected from a group consisting of helium, argon and hydrogen.
14. The process of claim 13 , wherein the titanium gas includes titanium tetrachioride gas introduced into the carrier gas using a bubbler apparatus.
15. The process of claim 13 , wherein a liquid injector sprays the titanium tetrachloride gas and passes the titanium tetrachloride gas through a vaporizer.
16. The process of claim 1 , wherein the plasma comprises a plasma produced with a radio frequency source.
17. The process of claim 16 , wherein the radio frequency source comprises a radio frequency source having a power setting within a range of about 20 watts to about 100 watts.
18. The process of claim 16 , wherein the radio frequency source comprises a radio frequency source having a frequency greater than about 10 KHz.
19. The process of claim 1 , further comprising: premixing the titanium gas and the hydrocarbon gas before being admitted to the chamber.
20. The process of claim 19 , wherein a ratio of the hydrocarbon gas to the titanium gas comprising the premixture thereof comprises a ratio of between about four and about one thousand to one.
21. A plasma enhanced chemical vapor deposition process comprising:
admitting hydrocarbon gas and titanium tetrachioride into a chamber;
forming a plasma within the chamber of the hydrocarbon gas for forming hydrocarbon radicals;
maintaining the plasma at a power level substantially greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming the hydrocarbon radicals; and
reacting a material adsorbed on a surface of a semiconductor wafer with some of the hydrocarbon radicals to react with some chlorine atoms from the titanium tetrachioride for forming chlorinated hydrocarbon molecules for depositing titanium metal on a portion of the surface of the semiconductor wafer.
22. The process of claim 21 , further comprising:
maintaining the chamber at a pressure within a range of about 2 torr to about 10 torr.
23. The process of claim 21 , wherein the power level comprises a radio frequency source operating at a power setting within a range of about 20 watts to about 100 watts and at a frequency greater than about 10 KHz.
24. The process of claim 21 , further comprising:
premixing the titanium tetrachloride and the hydrocarbon gas for their admission to the chamber in a ratio of hydrocarbon gas to the titanium tetrachloride being between about four and about one thousand to one.
25. The process of claim 21 , wherein the hydrocarbon gas includes methane.
26. The process of claim 21 , wherein the hydrocarbon gas includes a hydrocarbon gas selected from a group consisting of compounds C n H 2n+2 , C n H 2n and C n H 2n−2 .