Semiconductor device having stressors and method for forming
View Patent ↗N channel and P channel transistors are enhanced by applying stressor layers of tensile and compressive, respectively, over them. A previously unknown problem was discovered concerning the two stressor layers, which both may conveniently be nitride but made somewhat differently. The two stressors have different etch rates which results in deleterious effects when etching a contact hole at the interface between the two stressors. A contact to a gate is often preferably half way between N and P channel transistors which is also the seemingly best location for the border between the two stressor layers. The contact etch at the border can result in pitting of the underlying gate structure or in residual nitride in the contact hole. Therefore, it has been found beneficial to ensure that each contact is at least some predetermined distance from the stressor of the opposite type from the one the contact is passing through.
1. An integrated circuit, comprising:
a plurality of N channel transistors comprising features formed in first active portions of a semiconductor layer and first gate structures overlying the semiconductor layer, wherein the first gate structures have portions outside the first active portions;
a plurality of P channel transistors comprising features formed in second active portions of the semiconductor layer and second gate structures overlying the semiconductor layer wherein the second gate structures have portions outside the second active region;
compressive stressors over the P channel transistors and having portions outside the second active regions;
tensile stressors over the N channel transistors and having portions outside the first active portions, whereby boundaries are present at interfaces between the tensile and compressive stressors; and
contacts to the first and second gate structures wherein each contact extends through a compressive stressor or a tensile stressor, and wherein substantially all of the contacts to the first and second gate structures of the integrated circuit are at least a predetermined distance from the boundaries.
2. The integrated circuit of claim 1 , wherein at least 95 percent of the contacts of the integrated circuit are at least the predetermined distance from the boundaries.
3. The integrated circuit of claim 2 , wherein at least 99 percent of the contacts of the integrated circuit are at least the predetermined distance from the boundaries.
4. The integrated circuit of claim 3 , wherein all of the contacts of the integrated circuit are at least the predetermined distance from the boundaries.
5. The integrated circuit of claim 1 , wherein the compressive and tensile stressors comprise silicon nitride.
6. The integrated circuit of claim 1 , wherein the boundaries are at a location selected from a group consisting of (1) the location where the tensile and compressive stressors have edges that are adjoining, (2) the location where the tensile and compressive stressors have edges that overlap, and (3) the location where the tensile and compressive stressors have edges that have a space between them.
7. The integrated circuit of claim 1 , wherein:
the compressive and tensile stressors comprise silicon nitride with relatively small concentrations of hydrogen; and
the nitride of the compressive stressors is deposited using dual frequency PECVD with an inert process gas, and the nitride of the tensile stressors is deposited using single frequency PECVD without an inert process gas.
8. The integrated circuit of claim 7 , wherein the compressive stressors completely cover the second active portions and the tensile stressors completely cover the first active portions.
9. The integrated circuit of claim 8 , wherein a first plurality of the first and second gate structures comprise continuous conductive lines of polysilicon.
10. The integrated circuit of claim 9 , wherein the predetermined distance is 70 nanometers.
11. An integrated circuit, comprising:
a plurality of P channel transistors having a compressive stressors over them, wherein the compressive stressors have portions outside the P channel transistors;
a plurality of N channel transistors having a tensile stressors over them, wherein the tensile stressors have portions outside the N channel transistors;
first contacts through the tensile stressors but outside active areas of the N channel transistors that make electrical contacts to gates of the N channel transistors, wherein substantially all of the first contacts of the integrated circuit are at least 70 nanometers from any portion of the compressive stressors; and
second contacts through the compressive stressors but outside active areas of the P channel transistors that make electrical contact to gates of the P channel transistors, wherein substantially all of the second contacts of the integrated circuit are at least 70 nanometers from any portion of the tensile stressors.
12. The integrated circuit of claim 11 , wherein:
the tensile stressors comprises a first nitride layer;
the compressive stressors comprises a second nitride layer;
at least 99 percent of the first contacts of the integrated circuit are at least 70 nanometers from any portion of the compressive stressors; and
at least 99 percent of the second contacts of the integrated circuit are at least 70 nanometers from any portion of the tensile stressors.