Method for determining temperature profile in semiconductor manufacturing test
View Patent ↗A method is provided for testing semiconductor devices. In accordance with the method, a first usage temperature T 1 is obtained which represents the maximum or minimum temperature to which a semiconductor device will be exposed during its first use by a customer. The semiconductor device is then tested for defects while ramping the temperature to which the device is exposed from a first temperature T 0 to the temperature T 1 .
1. A method for testing a semiconductor device for defects, comprising:
obtaining a first usage temperature profile P 1 which represents a typical temperature profile to which a semiconductor device will be exposed to during its first use, wherein P 1 includes the temperature curve C 1 , wherein C 1 starts at temperature T 1 and ends at temperature T 2 ; and
testing the semiconductor device for defects while exposing the device to a temperature profile P 2 , wherein P 2 includes the curve C 1 , wherein T 1 ≠T 2 , and wherein the device is tested over the entire temperature profile P 2 , including over the entire curve C 1 .
2. The method of claim 1 , wherein P 1 =P 2 .
3. The method of claim 1 , wherein C 1 =P 1 .
4. The method of claim 1 , wherein 0° C.≦T 1 ≦35° C.
5. The method of claim 1 , wherein 75° C.≦T 2 ≦95° C.
6. The method of claim 1 , wherein T 2 −T 1 ≧50° C.
7. The method of claim 1 , wherein the semiconductor device is continuously tested for defects while it is exposed to the temperature profile P 2 .
8. The method of claim 1 , wherein temperature profile P 2 includes first, second and third segments, wherein said first segment staffs at temperature T 1 and ends at temperature T 2 , wherein said second segment staffs at temperature T 2 and ends at temperature T 2 , wherein said third segment starts at temperature T 2 and ends at temperature T 3 , wherein T 2 >T 1 and T 2 >T 3 .
9. The method of claim 1 , wherein T P1max is the maximum temperature in the temperature profile P 1 , wherein T P2max is the maximum temperature in the temperature profile P 2 , and wherein T P2max >T P1max .
10. The method of claim 1 , wherein the semiconductor device is a chipset for an automobile engine.
11. The method of claim 1 , wherein the first usage occurs after the device is incorporated into a product.
12. The method of claim 1 , further comprising subjecting the semiconductor device to a first use after testing.
13. A method for testing a semiconductor device for defects, comprising:
obtaining a typical profile P 1 of a time dependent environmental parameter to which a semiconductor device will be exposed during its first use, wherein P 1 commences at time t 0 and ends at time t n , and wherein the state s 0 of the parameter at time t 0 differs from the state S k of the parameter at time t k , wherein t 0 <t k ≦t n ; and
testing the semiconductor device for defects while the environmental parameter is varied in accordance with the profile P 2 , wherein P 1 and P 2 essentially overlap over the time interval t 0 ≦t≦t k , and wherein the semiconductor device is tested over the time interval t 0 ≦t≦t k .
14. The method of claim 13 , wherein the time dependent environmental parameter is temperature.
15. A method for testing a semiconductor device for defects, comprising:
determining a typical profile P 1 of an environmental parameter to which a semiconductor device may be exposed;
deriving a test profile P 2 from the profile P 1 ; and
using the profile P 2 to test the semiconductor device for defects;
wherein P 1 includes a curve C 1 , wherein C 1 starts at temperature T 1 and ends at temperature T 2 , wherein T 1 ≠T 2 , and wherein the semiconductor device is tested for defects over the entire curve C 1 .
16. The method of claim 15 , wherein the profile P 1 is a typical profile of a time dependent environmental parameter to which a semiconductor device may be exposed during its first use.
17. The method of claim 15 , wherein P 1 commences at time t 0 and ends at time t n , wherein the state s 0 of the parameter at time to differs from the state S k of the parameter at time t k , and wherein t 0 <t k ≦t n .
18. The method of claim 15 , wherein the semiconductor device is tested for defects while the environmental parameter is varied in accordance with the profile P 2 , and wherein P 1 and P 2 essentially overlap over the time interval t 0 ≦t≦t k .
19. The method of claim 15 , wherein the environmental parameter is a time dependent variable.
20. The method of claim 15 , wherein the profile P 2 is derived from data related to the contemplated end use of the semiconductor device.
21. The method of claim 15 wherein the environmental parameter is temperature.
22. The method of claim 15 , wherein the step of determining a typical profile P 1 of an environmental parameter to which a semiconductor device will be exposed includes the steps of obtaining data related to an end use of the semiconductor device, and utilizing that data to derive the profile P 1 .