Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers
View Patent ↗One embodiment of the present invention provides a method for the deposition of a Carbon containing layer on a Silicon surface wherein a (i) substantially Silicon-oxide-free or reduced oxide interface results between Silicon and the Carbon containing layer during the deposition. In another embodiment, the present invention provides a method for deposition of a Carbon containing layer wherein the deposition process is substantially soot (particle)-free or reduction of soot.
1. A method for depositing a layer containing Carbon on a Si substrate, said method comprising:
a) removing a Silicon-oxide layer from the surface of the Si substrate,
b) placing said Si substrate in a chamber for processing at a first temperature T 1 , and
c) increasing said temperature T 1 to a second temperature T 2 , wherein during said temperature increase, at least a first gas G 01 and a second gas G 02 containing at least Carbon are introduced into the chamber, and a layer containing Carbon is deposited at atmospheric pressure.
2. A method according to claim 1 , wherein said temperature T 1 is approximately room temperature.
3. A method according to claim 1 , wherein said temperature T 2 is approximately in the range of 700° C. to 1200° C.
4. A method according to claim 1 , wherein said gas G 01 is selected from the group of gases consisting of Ar, He, H 2 , N 2 and combinations thereof.
5. A method according to claim 1 , wherein said gas G 02 contains at least one Carbon element.
6. A method according to claim 5 , wherein said gas G 02 is selected from the group of gases consisting of C n H 2n+2 wherein n is between 1 and 4, C 2 H 2 , C 2 H 4 , CCl 4 , and combinations thereof.
7. A method according to claim 1 , wherein the flow ratio of said gas G 01 to said gas G 02 is approximately in the range of 1/100 to 20/1.
8. A method according to claim 1 , wherein the thickness of said layer containing Carbon is approximately in the range of 1 nm to 500 nm.
9. A method for depositing a system of layers containing Carbon on a Si substrate, said method comprising:
a) removing a Silicon-oxide layer from the surface of the Si substrate,
b) placing said Si substrate in a chamber for processing at a first temperature T 1 ,
c) increasing said temperature T 1 to a second temperature T 2 ,
d) during said temperature increase, introducing into said chamber at least a first gas G 01 and a second gas G 02 containing at least Carbon and depositing, at atmospheric pressure, a first layer L 1 containing Carbon until a pre-defined thickness d 1 is achieved,
e) switching off the flow of said gas G 02 while said gas G 01 continues to flow into said chamber at said Temperature T 2 and at atmospheric pressure,
f) continuing to introduce said gas G 01 in said chamber and introducing said gas G 02 as a pulse during a pre-determined pulse-time and depositing, at atmospheric pressure, a second layer L 2 containing Carbon,
g) repeating the steps e and f until a predefined thickness d 2 of said layer L 2 is achieved,
h) switching off the flow of said gas G 02 while said gas G 01 continues to flow into aid chamber at said Temperature T 2 and at atmospheric pressure,
i) increasing said temperature T 2 to a third temperature T 3 ,
j) annealing said layer L 2 at said temperature T 3 for a pre-defined time t 1 ,
k) under said gas G 01 , decreasing said temperature T 3 to a fourth temperature T 4 ,
l) switching off the flow of said gas G 01 , and
m) removing said system of layers containing Carbon on a Si substrate from said chamber.
10. A method according to claim 9 , wherein said temperature T 1 is approximately room temperature.
11. A method according to claim 9 , wherein said temperature T 2 is approximately in the range of 700° C. to 1200° C.
12. A method according to claim 9 , wherein said gas G 01 is selected from the group of gases consisting of Ar, He, H 2 , N 2 and combinations thereof.
13. A method according to claim 9 , wherein said gas G 02 contains at least one Carbon element.
14. A method according to claim 13 , wherein said gas G 02 is selected from the group consisting of C n H 2n+2 with n between 1 and 4, C 2 H 2 , C 2 H 4 , CCl 4 , and combinations thereof.
15. A method according to claim 9 , wherein the flow ratio of said gas G 01 to said gas G 02 is approximately in the range of 1/100 to 20/1.
16. A method according to claim 9 , wherein the thickness d 1 of said layer L 1 is approximately in the range of 1 nm to 500 nm.
17. A method according to claim 9 , wherein the thickness d 2 of said layer L 2 is approximately in the range of 1 nm to 10 mm.
18. A method according to claim 9 , wherein said temperature T 3 is approximately in the range of 850° C. to 1500° C.
19. A method according to claim 9 , wherein said time t 1 is approximately in the range of 0.5 minute to 5 minutes.
20. A method according to claim 9 , wherein said temperature T 4 is approximately in the range of 20° C. to 400° C.