Semiconductor device manufacturing method, semiconductor device, laminated semiconductor device, circuit substrate, and electronic apparatus
View Patent ↗A semiconductor device includes a semiconductor element, a penetrating electrode which penetrates the semiconductor element, and a resin layer which selectively covers side walls and corners of the semiconductor element.
1. A semiconductor device manufacturing method comprising:
affixing a semiconductor wafer, which includes a plurality of semiconductor element sections which a conductive material is buried in, to a supporting body via an adhesive layer;
forming a penetrating electrode which penetrates the plurality of semiconductor element sections and has the conductive material, by thinning the semiconductor wafer;
cutting the semiconductor wafer so that the supporting body remains, and dividing the semiconductor wafer into the plurality of semiconductor element sections;
forming a resin layer after the cutting of the semiconductor wafer, the resin layer selectively covering side walls and corners of the plurality of semiconductor element sections formed by cutting the semiconductor wafer; and
peeling the semiconductor element sections from the supporting body after the forming of the resin layer.
2. The semiconductor device manufacturing method according to claim 1 , wherein the forming of the resin layer has:
applying resin in selective regions on the semiconductor wafer which include gaps between the plurality of semiconductor elements formed by cutting the semiconductor wafer; and
splitting the resin which is buried in the gaps so that the supporting body remains.
3. The semiconductor device manufacturing method according to claim 2 , wherein, in the splitting of the resin, the resin layer has a positive photosensitive resin which is exposed and developed.
4. The semiconductor device manufacturing method according to claim 1 , wherein
the resin layer additionally covers a periphery of the penetrating electrode,
the resin layer partially covers a surface of the semiconductor element section, the surface including an area in which the penetrating electrode is buried.
5. The semiconductor device manufacturing method according to claim 1 , wherein, in the peeling the semiconductor element sections, ultraviolet rays which reduce the adhesion of the adhesive layer are applied to the adhesive layer.