Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
View Patent ↗Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.
1. A semiconductor component comprising:
a gate electrode layer adjacent a substrate;
a gate dielectric layer adjacent the gate electrode layer, wherein the gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group, the molecular group being capable of a π-π interactions;
a source layer adjacent the gate electrode layer;
a drain layer adjacent the gate electrode layer;
an organic semiconductor layer adjacent the gate electrode layer; and
a passivation layer adjacent the organic semiconductor layer.
2. The semiconductor component of claim 1 , wherein the semiconductor component is an organic field effect transistor (OFET), and the monolayer comprises at least one dielectric layer.
3. The semiconductor component of claim 1 , wherein the molecular group capable of π-π interactions is selected from the group consisting essentially of a naphthalene, anthracene, naphthacene, pentacene, biphenyl, terphenyl, quaterphenyl, quinquephenyl, and combinations thereof.
4. The semiconductor component of claim 1 , wherein the molecular group capable of π-π interactions is selected from the group consisting essentially of:
Furan Thiophene Pyrrole Oxazole Thiazole Imidazole Isoxazole Isothiazol Pyrazole
Benzo[b]furan Benzo[b]thiophene Indole 2H-Isoindole Benzothiazole
Pyridine Pyrazine Pyrimidine Pyrylium α-Pyrone γ-Pyrone
Quinoline Isoquinoline Bipyridine & derivatives (0-2 X i /ring=N), and combinations thereof.
5. The semiconductor component of claim 1 , wherein the compound has at least one anchor group, wherein the anchor group binds to the substrate.
6. The semiconductor component of claim 5 , wherein the the anchor group has at least one silane.
7. The semiconductor component of claim 6 , wherein the silane is selected from the group consisting essentially of a trichlorosilane, dichlorosilane, a monochlorosilane, a trialkoxysilane, a dialkoxysilane, a monoalkoxysilane, and combinations thereof.
8. The semiconductor component of claim 6 , wherein compound has a substantially linear structure and the molecular group capable of a π-π interactions is arranged at an end of the linear structure remote from the anchor group.
9. The semiconductor component of claim 1 , wherein the compound is selected from the group consisting essentially of a -substituted alkyltrichlorosilane, a -substituted alkanethiol, a alkaneselenol, disulfides and selenides thereof, and combinations thereof.
10. The semiconductor component of claim 1 , wherein the compound is selected from the group consisting essentially of an -phenoxyoctadecyltrichlorosilane, -biphenyloxyoctadecyltrichlorosilane, a phenoxyoctadecanethiol, a thienyloctadeclytrichlorosilane, and combinations thereof.
11. The semiconductor component of claim 1 , wherein the compound has a dielectric group for forming the dielectric layer.
12. The semiconductor component of claim 11 , wherein the dielectric group has at least one n-alkyl group with n=2 to 20.
13. The semiconductor component of claim 1 , wherein the monolayer is arranged on the substrate, the substrate having a surface, wherein the surface is selected from the group consisting essentially of a metallic surface, a metal oxide surface, a plastic surface, and combinations thereof.
14. The semiconductor component of claim 13 , wherein the surface has hydroxyl groups.
15. The semiconductor component of claim 14 , wherein the substrate is silicon or aluminum.
16. The semiconductor component of claim 1 , further comprising:
anchor groups bonding the monolayer to the substrate;
a layer of dielectric groups arranged above the anchor groups; and
a layer of molecular groups capable of a π-π interaction arranged above the dielectric groups.
17. The semiconductor component of claim 16 , wherein the anchor group, the dielectric group, and the molecular group capable of the π-π interaction are substantially the same length.
18. The semiconductor component of claim 16 , wherein a metal layer is arranged on the monolayer.
19. A semiconductor component of claim 1 , wherein the monolayer is deposited on the substrate from a liquid phase or a gas phase.
20. The semiconductor component of claim 19 , wherein the monolayer is deposited from a liquid phase with an organic solvent in an immersion process.