IP Library Granted Patent US 7,763,213
Granted Patent B2
US 7,763,213 · App. 11/314,220 · Granted Jul 27, 2010

Volatile corrosion inhibitor packages

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,763,213
App. No.
11/314,220
Granted
Jul 27, 2010
Kind
B2
Abstract

A package for enclosing volatile corrosion inhibiting materials includes a first enclosure barrier being fabricated from one or more gas-impermeable materials and defining a first enclosed space. The package further includes a substrate having one or more volatile corrosion inhibitor materials disposed thereon, with the substrate being disposed within the first enclosed space. In some embodiments, a second enclosure barrier being fabricated from a gas-permeable, solid particle-impermeable material is disposed in the first enclosed space, and defines a second enclosed space inside of the first enclosed space. In such embodiments, the substrate is preferably disposed within the second enclosed space.

Claims (44)

1. A method for inhibiting corrosion of corrosion-susceptible material, said method comprising:

(a) providing a corrosion inhibitor package having:

(i) a first enclosure barrier comprising one or more gas-impermeable materials and defining a first enclosed space;

(ii) a second enclosure barrier comprising a gas-permeable, solid particle-impermeable material, said second enclosure barrier being disposed in said first enclosed space and defining a second enclosed space inside of said first enclosed space, said second enclosure barrier having mono-direction emissivity and permitting vapors to pass through said second enclosure barrier from within the second enclosed space; and

(iii) a substrate having one or more volatile corrosion inhibitor materials disposed thereon, said substrate being disposed within said second enclosed space;

(b) breaching said first enclosure barrier to thereby render said second enclosed space in gas communication with ambient environment external to said corrosion inhibitor package; and

(c) placing said corrosion inhibitor package in proximity to corrosion-susceptible material.

2. A method as in claim 1 wherein the breaching includes removing at least a portion of said first enclosure barrier from said corrosion inhibitor package.

3. A method as in claim 1 wherein said corrosion-susceptible material is metal surfaces of a semiconductor device.

4. A method as in claim 1 wherein said corrosion-susceptible material is metal surfaces of a semiconductor wafer.

5. A method as in claim 1 wherein said corrosion inhibitor package is placed between about 0.1 and 30 cm from said corrosion-susceptible material.

6. A method as in claim 1 , including substantially immediately placing said corrosion inhibitor package in proximity to said corrosion-susceptible material upon breach of said first enclosure barrier.

7. A method as in claim 1 , wherein said substrate includes an open cell foam divided into a plurality of distinct foam pieces having a mean diameter of between about 0.25 mm and 0.5 mm.

8. A method as in claim 1 , wherein said one or more volatile corrosion inhibitor materials are disposed on said substrate with a loading of 35 wt % to 60 wt %.

9. A method as in claim 1 , wherein said one or more gas-impermeable materials include a metalized polyethylene terephthalate film including a vapor deposited film of metal.

10. A method as in claim 1 , wherein said one or more gas-impermeable materials of said first enclosure barrier include a self-supporting gas-impermeable material defining an annular flange.

11. A method as in claim 10 , wherein said one or more gas-impermeable materials of said first enclosure barrier further include a barrier layer secured to the annular flange.

12. A method for inhibiting corrosion of corrosion-susceptible material, said method comprising:

(a) providing a corrosion inhibitor package having:

(i) a first enclosure comprising one or more gas-impermeable materials and defining a first enclosed space;

(ii) a second enclosure defining a second enclosed space within the first enclosed space, the second enclosure having mono-direction emissivity and permitting vapor to pass through the second enclosure from the inside of the second enclosed space; and

(iii) a substrate having one or more volatile corrosion inhibitor materials disposed thereon, said substrate being disposed within said first enclosed space;

(b) breaching said enclosure barrier to thereby render said substrate in gas communication with ambient environment external to said enclosure barrier; and

(c) placing said substrate in proximity to said corrosion-susceptible material.

13. A method as in claim 12 wherein the breaching includes removing at least a portion of said enclosure barrier from said corrosion inhibitor package.

14. A method as in claim 12 wherein said corrosion-susceptible material is metal surfaces of a semiconductor device.

15. A method as in claim 12 wherein said corrosion-susceptible material is metal surfaces of a semiconductor wafer.

16. A method as in claim 12 wherein said substrate is placed between about 0.5 and 30 cm from said corrosion-susceptible material.

17. A method as in claim 12 , including substantially immediately placing said substrate in proximity to said corrosion-susceptible material upon breach of said enclosure barrier.

18. A method as in claim 12 , wherein said substrate includes an open cell foam divided into a plurality of distinct foam pieces having a mean diameter of between about 0.25 mm and 0.5 mm.

19. A method as in claim 12 , wherein said one or more volatile corrosion inhibitor materials are disposed on said substrate with a loading of 35 wt % to 60 wt %.

20. A method as in claim 12 , wherein said one or more gas-impermeable materials include a metalized polyethylene terephthalate film including a vapor deposited film of metal.

21. A method as in claim 12 , wherein said one or more gas-impermeable materials of said first enclosure include a self-supporting gas-impermeable material defining an annular flange.

22. A method as in claim 21 , wherein said one or more of said gas-impermeable materials first enclosure further include a barrier layer secured to the annular flange.

23. A method for inhibiting corrosion of corrosion-susceptible material, said method comprising:

(a) providing a corrosion inhibitor package having:

(i) a first enclosure barrier defining a first enclosed space and comprising a gas-impermeable material including a metalized polyethylene terephthalate film including vapor deposited metal;

(ii) a second enclosure barrier disposed within the first enclosed space and defining a second enclosed space, the second enclosure barrier being mono-direction emissive and permitting vapors to pass through said second enclosure barrier from within the second enclosed space; and

(iii) a substrate having one or more volatile corrosion inhibitor materials disposed thereon, said substrate being disposed within said second enclosed space;

(b) breaching said first enclosure barrier to thereby render said second enclosed space in gas communication with ambient environment external to said corrosion inhibitor package; and

(c) placing said corrosion inhibitor package in proximity to corrosion-susceptible material.

24. A method as in claim 23 , wherein the first enclosure barrier further comprises a self-supporting barrier material defining an annular flange, the metalized polyethylene terephthalate film secured to the annular flange.

25. A method as in claim 23 , wherein said substrate includes an open cell foam divided into a plurality of distinct foam pieces having a mean diameter of between about 0.25 mm and 0.5 mm.

26. A method as in claim 23 , wherein said one or more volatile corrosion inhibitor materials are disposed on said substrate with a loading of 35 wt % to 60 wt %.

Assignments (15)
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 024085/0001 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2005
From: MIKSIC, BORIS A.; CRAESUER, CLIFF; WUERTZ, BRIAN
To: CORTEC CORPORATION
Reel/Frame 017407/0034 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2005
From: BOLTON, SCOTT; HAYGOOD, BARRY T.; MCEWAN, GRANT W.
To: FREESCALE CONDUCTOR, INC.
Reel/Frame 017407/0025 →