IP Library Granted Patent US 7,646,048
Granted Patent B2
US 7,646,048 · App. 11/319,592 · Granted Jan 12, 2010

CMOS image sensor

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Quick Facts
Patent No.
US 7,646,048
App. No.
11/319,592
Granted
Jan 12, 2010
Kind
B2
Abstract

A CMOS image sensor includes a photo-transistor capable of performing photo-sensing and active amplification. The photo-transistor is installed to improve low illustration characteristics while maintaining an existing pixel operation. The CMOS image sensor also includes a reset transistor connected to the photo-transistor and adapted to perform a reset function, a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo-transistor, and a switching transistor connected to the drive transistor and adapted to perform an addressing function.

Claims (12)

1. A complementary metal oxide silicon (CMOS) image sensor comprising:

a photo-transistor for performing a photo-sensing and amplification function;

a reset transistor connected to the photo-transistor, the reset transistor performing a reset function;

a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo-transistor;

a switching transistor connected to the drive transistor, the switching transistor performing an addressing function; and

a load transistor connected to the photo-transistor for controlling the amplification function of the photo-transistor;

wherein the load transistor has one terminal connected in common to one terminal of the photo-transistor, one terminal of the reset transistor and a gate of the drive transistor, and the other terminal connected to a supply voltage terminal.

2. The CMOS image sensor of claim 1 , wherein the photo-transistor has one terminal connected to a ground terminal, and the other terminal connected in common to one terminal of the load transistor, one terminal of the reset transistor and a gate of the drive transistor.

3. The CMOS image sensor of claim 1 , wherein the photo-transistor is formed in a well, the well being isolated from the reset transistor, drive transistor and switching transistor.

4. The CMOS image sensor of claim 3 , wherein the photo-transistor has a gate electrode electrically connected with the well.

5. The CMOS image sensor of claim 1 , wherein the photo-transistor is a PMOS type photo-transistor.

6. The CMOS image sensor of claim 5 , wherein the photo-transistor has one terminal connected to a supply voltage terminal, and the other terminal connected in common to one terminal of the load transistor, one terminal of the reset transistor and a gate of the drive transistor.

Assignments (4)
CHANGE OF NAME Recorded Nov 30, 2017
From: DONGBU HITEK CO., LTD.
To: DB HITEK CO., LTD
Reel/Frame 044555/0913 →
MERGER AND CHANGE OF NAME Recorded Nov 29, 2017
From: DONGBU ELECTRONICS CO., LTD.; DONGBU HITEK CO., LTD.
To: DONGBU HITEK CO., LTD.
Reel/Frame 044533/0523 →
CHANGE OF NAME Recorded Jun 15, 2006
From: DONGBUANAM SEMICONDUCTOR INC.
To: DONGBU ELECTRONICS CO., LTD.
Reel/Frame 018176/0351 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2005
From: KIM, BUM SIK
To: DONGBUANAM SEMICONDUCTOR INC.
Reel/Frame 017387/0989 →