Voltage-dividing resistor and semiconductor device having the same

1. A voltage-dividing resistor, comprising:

a polysilicon layer formed on a semiconductor substrate;

a metal layer formed on a partial area of the polysilicon layer;

an insulating interlayer covering the polysilicon layer and the metal layer;

a first electrode for applying a first reference voltage to one end of the polysilicon layer;

a second electrode for applying a second reference voltage to the other end of the polysilicon layer;

a plurality of third electrodes provided between the first and second electrodes to contact the metal layer; and

a plurality of fourth electrodes provided between the first and second electrodes to contact the polysilicon layer.

2. The voltage-dividing resistor of claim 1 , wherein the metal layer comprises tungsten silicide.

3. The voltage-dividing resistor of claim 1 , wherein the metal layer extends from the first electrode to a center point between the first and second electrodes.

4. The voltage-dividing resistor of claim 1 , wherein the metal layer is formed on an area where the first and second electrodes contact the polysilicon layer.

5. The voltage-dividing resistor of claim 1 , wherein the pluralities of third and fourth electrodes are equidistantly arranged between the first and second electrodes.

6. The voltage-dividing resistor of claim 1 , wherein the first reference voltage is applied to the polysilicon layer via a contact hole penetrating the insulating interlayer.

7. The voltage-dividing resistor of claim 1 , wherein the second reference voltage is applied to the polysilicon layer via a contact hole penetrating the insulating interlayer.

8. The voltage-dividing resistor of claim 1 , wherein the plurality of third electrodes contact the metal layer via respective contact holes.

9. The voltage-dividing resistor of claim 1 , wherein the plurality of fourth electrodes contact the polysilicon layer via respective contact holes.

10. A semiconductor device, comprising:

a polysilicon layer formed on a semiconductor substrate;

a first reference electrode, electrically connecting with one end of the polysilicon layer, to apply a first reference voltage to the one end of the polysilicon layer;

a second reference electrode electrically connecting with the other end of the polysilicon layer, to apply a second reference voltage to the other end of the polysilicon layer;

a tungsten silicide layer formed on a partial area of the polysilicon layer;

at least one first resistance distributing electrodes provided between the first and second reference electrodes to contact the tungsten silicide layer; and

at least one second resistance distributing electrodes provided between the first and second reference electrodes to contact the polysilicon layer,

wherein the tungsten silicide layer extends from the first reference electrode to a point between the first and second reference electrodes.

11. The semiconductor device of claim 10 , wherein the at least one first and second resistance distributing electrodes are equidistantly arranged between the first and second reference electrodes.

12. The semiconductor device of claim 11 , wherein the at least one first resistance distributing electrodes are centrally provided between the first and second reference electrodes and between the first reference electrode and a point between the first and second reference electrodes.

13. The semiconductor device of claim 12 , wherein the at least one second resistance distributing electrodes are centrally provided between the first and second reference electrodes and at the second reference electrode.