Method for fabricating a semiconductor device
View Patent ↗Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coating on an entire surface of a substrate in succession, forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating, etching the bottom anti-refection coating by using the photoresist film pattern to deposit by-product of the etching on sidewalls of the photoresist pattern to form spacers, and etching the polysilicon by using the photoresist film pattern and the spacers, to form a line.
1. A method for fabricating a semiconductor device comprising:
sequentially depositing a polysilicon and a bottom anti-refection coating on an entire surface of a substrate;
forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating;
etching the bottom anti-refection coating by using the photoresist film pattern, to deposit by-product of the etching on sidewalls of the photoresist pattern, but not on a surface of the polysilicon, to form spacers; and
etching the polysilicon using the photoresist film pattern and the spacers as a mask to form a line.
2. The method as claimed in claim 1 , wherein the step of etching the bottom anti-refection coating is performed by a capacitive coupled plasma apparatus.
3. The method as claimed in claim 2 , wherein the etching of the bottom anti-refection coating in the capacitive coupled plasma apparatus is performed by supplying 60-100 sccm of CF 4 , 100-150 sccm of Ar, and 5-15 sccm of O 2 at 40-70 mT of pressure, and 500-1000 W of power.
4. The method as claimed in claim 3 , wherein the etching of the bottom anti-refection coating is performed for 10-20 seconds.
5. The method as claimed in claim 3 , wherein the etching of the bottom anti-refection coating is performed with a gap of 25-30 mm between a plasma source and the substrate in the capacitive coupled plasma apparatus.
6. The method as claimed in claim 2 , wherein the spacers are formed in the capacitive coupled plasma apparatus by supplying 10-30 sccm of C 5 F 8 , 2-10 sccm of CH 2 F 2 , 50-100 sccm of Ar, and 0-5 sccm of O 2 at 20-50 mT of pressure and 500-1000 W of power, with a gap of 25-30 mm between the plasma source (not shown) and the substrate 100 .
7. The method as claimed in claim 6 , wherein the formation of the spacers is performed with a gap of 25-30 mm between a plasma source and the substrate in the capacitive coupled plasma apparatus.
8. The method as claimed in claim 6 , wherein the formation of the spacers is performed for 15-30 seconds.