Method for manufacturing semiconductor device
View Patent ↗Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a device isolation film having a step difference occurring during a process of forming a device isolation film in a scribe lane region serves as a first alignment key, and a second alignment key formed during a process of forming a recess gate region is used in the subsequent process, thereby improving the process steps and product cost.
1. A method for manufacturing a semiconductor device comprising the steps of:
(a) forming a device isolation film on a cell region and a scribe lane on a semiconductor substrate to define an active region and an alignment key region, respectively, the device isolation film on the scribe lane having a step difference serving as a first alignment key occurs; and
(b) forming a recess gate region on the cell region and a second alignment key on the scribe lane, wherein a first thickness of the first alignment key ranges from 250 Å to 350 Å.
2. The method according to claim 1 , wherein the first alignment key serves as an alignment key for a recess gate mask to align with the active region during a process forming a recess gate region.
3. The method according to claim 1 , wherein a second thickness of the second alignment key ranges from 1000 Å to 1500 Å, and the second alignment key is spaced apart from the first alignment key by a predetermined distance.
4. The method according to claim 1 , wherein the second alignment key serves as an alignment key for a gate mask to align with the recess gate region during a process forming a gate.
5. A method for manufacturing a semiconductor device comprising the steps of:
(a) forming a device isolation film on a cell region and a scribe lane on a semiconductor substrate to define an active region and an alignment key region, respectively, the device isolation film on the scribe lane having a step difference serving as a first alignment key occurs;
(b) forming a hard mask layer pattern on an entire surface of the semiconductor substrate including the device isolation film to define a recess gate region in the cell region and a second alignment key region in the scribe lane; and
(c) etching the semiconductor substrate using the hard mask layer pattern as an etching mask to form the recess gate region in the cell region and the second alignment key in the scribe lane.
6. The method according to claim 5 , wherein a first thickness of the first alignment key ranges from 250 Å to 350 Å.
7. The method according to claim 5 , wherein the first alignment key serves as an alignment key for a recess gate mask to align with the active region during a process forming a recess gate region.
8. The method according to claim 5 , wherein the hard mask layer is a polysilicon layer.
9. The method according to claim 5 , wherein a second thickness of the second alignment key ranges from 1000 Å to 1500 Å, and the second alignment key is spaced apart from the first alignment key by a predetermined distance.
10. The method according to claim 5 , wherein the second alignment key serves as an alignment key for a gate mask to align with the recess gate region during a process forming a gate.