Monitoring pattern for optimization of chemical mechanical polishing process of trench isolation layer and related methods
A monitoring pattern includes unique active area arrays, each having at least two active areas separated and defined by a trench isolation area filled with a trench isolation layer. Each active area array differs from the others in shape, size, spaced distance, extending direction, and/or density. In a monitoring method, after the monitoring pattern is formed, preferably in scribe lanes, optical images of the active area arrays are obtained. Digital optical data is produced from the optical images and then checked to monitor a CMP process. The digital optical data contain information on the active area arrays and variable information according to height of each active area array. The CMP process may be performed until a polishing target established from the digital optical data is reached.
1 . A monitor for a process of chemical mechanical polishing a trench isolation layer, comprising:
a plurality of active area arrays, each active area array including at least two active areas separated and defined by the trench isolation layer,
wherein each active area array differs from the other active area arrays in shape, size, spacing, orientation, and/or density.
2 . The monitoring pattern of claim 1 , wherein the plurality of active area arrays are in one or more scribe lanes of a wafer.
3 . The monitoring pattern of claim 1 , wherein each of the active area arrays has a specific optical image different from the other active area arrays.
4 . A method of monitoring a process of chemical mechanical polishing a trench isolation layer, the method comprising:
obtaining optical images of a plurality of unique active area arrays, each active area array having at least two active areas separated and defined by a trench isolation area;
producing digital optical data from the optical images, wherein the digital optical data contain information from the active area arrays and variable information according to heights of each active area array and/or of the trench isolation area; and
checking the digital optical data.
5 . The method of claim 4 , further comprising:
establishing a polishing target from the digital optical data after producing the digital optical data.
6 . The method of claim 4 , comprising forming the plurality of active area arrays in one or more scribe lanes of a wafer.
7 . The method of claim 4 , further comprising forming the monitor.
8 . The method of claim 4 , wherein each active area array differs from the other active area arrays in shape, size, spacing, orientation, and/or density.
9 . The method of claim 4 , wherein checking the digital optical data comprises comparing the digital optical data to a data correlated to a polishing endpoint.
10 . A method of chemical mechanical polishing a trench isolation layer, the method comprising:
forming a monitoring pattern in scribe lanes of a wafer, the monitoring pattern including a plurality of unique active area arrays, each active area array having at least two active areas separated and defined by a trench isolation area;
obtaining optical images of the plurality of active area arrays;
producing digital optical data from the optical images, wherein the digital optical data contain information on the active area arrays and variable information according to heights of each active area array and/or of the trench isolation area;
establishing a polishing target from the digital optical data; and
chemical mechanical polishing the wafer.
11 . The method of claim 10 , wherein each active area array differs from the others in shape, size, spacing, orientation, and/or density.
12 . The method of claim 10 , wherein the chemical mechanical polishing is conducted until the polishing target is reached.