Capacitor with nano-composite dielectric layer and method for fabricating the same

1. A method for fabricating a capacitor, comprising:

forming a lower electrode;

forming a nano-composite layer over the lower electrode by mixing X number of different sub-layers, where X is a positive integer greater than approximately 1;

densifying the nano-composite layer; and

forming an upper electrode layer over the nano-composite layer.

2. The method of claim 1 , wherein the forming of the nano-composite layer includes depositing two different sub-layers, one of which includes ZrO 2 having a large band gap energy and the other of which includes TiO 2 having a large dielectric constant.

3. The method of claim 2 , wherein the depositing of the ZrO 2 sub-layer and the TiO 2 sub-layer are carried out by performing a unit cycle until the nano-composite layer has a predetermined thickness ranging from approximately 25 Å to approximately 200 Å.

4. The method of claim 3 , wherein the unit cycle includes a ZrO 2 deposition cycle and a TiO 2 deposition cycle performed M and N times respectively, M and N being positive integers each being greater than approximately 1, until each of the ZrO 2 sub-layer and the TiO 2 sub-layer has a predetermined thickness ranging from approximately 0.1 Å to approximately 9.9 Å.

5. The method of claim 4 , wherein each of the ZrO 2 deposition cycle and the TiO 2 deposition cycle includes:

adsorbing a source material;

purging out the source material that is not reacted;

supplying an oxygen providing source material to react with the adsorbed source material; and

purging out the oxygen providing source material that is not reacted and reaction by-products.

6. The method of claim 5 , wherein each of the ZrO 2 deposition cycle and the TiO 2 deposition cycle is performed at a chamber in which a pressure and a temperature of a substrate are maintained at approximately 0.1 torr to approximately 10 torr and at approximately 100° C. to approximately 350° C., respectively.

7. The method of claim 5 , wherein in the case of the ZrO 2 deposition cycle, the source material is selected from the group consisting of Zr(O-tBu) 4 , Zr[N(CH 3 ) 2 ] 4 , Zr[N(C 2 H 5 )(CH 3 )] 4 , Zr[N(C 2 H 5 ) 2 ] 4 , Zr(TMHD) 4 , Zr(OiC 3 H 7 ) (TMHD), and Zr(OtBu) 4 .

8. The method of claim 5 , wherein in the ease of the TiO 2 deposition cycle, the source material is selected from an alkoxide based material or a β-diketonate based ligand containing material.

9. The method of claim 8 , wherein the alkoxide based material is selected from the group consisting of Ti(i-OC 2 H 7 ) 4 , Ti(n-OC 4 H 9 ) 4 , Ti(t-OC 4 H 9 ) 4 , Ti(OC 2 H 5 ) 4 , Ti(OCH 3 ) 4 , and Ti(n-OC 2 H 7 ) 4 .

10. The method of claim 8 , wherein the β-diketonate based ligand containing material is selected from the containing group consisting of Ti(THD) 3 , Ti(OiPr) 2 (THD) 2 and Ti(MPD)(THD) 2 .

11. The method of claim 5 , wherein the oxygen providing source material is selected from the group consisting of O 3 , H 2 O and O 2 plasma and the purging includes supplying nitrogen gas or an inert gas.

12. The method of claim 1 , wherein the densifying the nano-composite layer is carried out by performing an annealing process at approximately 300° C. to approximately 500° C. for approximately 30 seconds to approximately 120 seconds.

13. The method of claim 3 , wherein the unit cycle includes:

adsorbing a source material;

purging out the source material that is not reacted;

supplying an oxygen providing source material to react with the adsorbed source material; and

purging out the oxygen providing source material that is not reacted and reaction by-products.

14. The method of claim 13 , wherein the unit cycle is performed at a chamber in which a pressure and a temperature of a substrate are maintained at approximately 0.1 torr to approximately 10 torr and at approximately 100° C. to approximately 350° C., respectively.

15. The method of claim 13 , wherein the source material includes ZrTi(MMP) 2 (OiPr) 5 .

16. The method of claim 13 , wherein the oxygen providing source material is selected from the group consisting of O 3 , H 2 O and O 2 plasma and the purging includes supplying nitrogen gas or an inert gas.

17. The method of claim 1 , wherein in the forming of the lower electrode, the lower electrode includes polysilicon doped with phosphorus or arsenic.

18. The method of claim 1 , further comprising forming a silicon nitride layer between the lower electrode and the nano-composite layer.

19. The method of claim 18 , wherein the forming of the silicon nitride layer includes performing a rapid thermal process (RTP) at approximately 800° C. to approximately 1,000° C. for approximately 10 seconds to approximately 120 seconds.