Method of making MoO
View Patent ↗The invention relates to high purity MoO 2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO 2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO 2 and MoO 2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.
1. A method for making a plate comprising:
(a) isopressing a greater than 99% stoichiometric MoO 2 powder component to a billet;
(b) vacuum sintering the billet under conditions to maintain the greater than 99% MoO 2 stoichiometry; and
(c) forming a plate comprising greater than 99% stoichiometric MoO 2 .
2. The method of claim 1 , wherein the billet is vacuum sintered for 6 hours at a temperature of at least 1250° C.
3. The method of claim 1 , wherein the MoO 2 powder is isopressed at a pressure ranging from 10,000 psi to 40,000 psi.
4. The method of claim 1 , wherein the plate is subjected to hot isostatic pressing.
5. The method of claim 1 , wherein the plate has a density that is from 90% to 100% of the theoretical density of MoO 2 .
6. A plate made in accordance to the method of claim 1 .