MOS device with multi-layer gate stack
Methods and apparatus are provided for semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a first surface of the substrate, and a multilayered gate structure located above the channel region. The gate structure comprises, a gate dielectric, preferably of an oxide of Hf, Zr or HfZr substantially in contact with the channel region, a first conductor layer of, for example an oxide of MoSi overlying the gate dielectric, a second conductor layer of, e.g., poly-Si, overlying the first conductor layer and adapted to apply an electrical field to the channel region, and an impurity migration inhibiting layer (e.g., MoSi) located above or below the first conductor layer and adapted to inhibit migration of a mobile impurity, such as oxygen for example, toward the substrate.
1. A method for forming a semiconductor device with a multilayered gate structure resistant to migration of a mobile species and overlying a channel region of the device, comprising:
providing a semiconductor substrate having an upper surface;
forming on the upper surface a stack of overlying layers in various orders, comprising:
a gate oxide layer having an interface in contact with the upper surface;
a first conductor layer comprising a metal oxide;
a first absorption layer of a conductive absorption material having a higher affinity for oxygen than the first conductor layer for reducing migration of the mobile species toward the interface;
a second conductor layer comprising the metal oxide;
a second absorption layer comprising the conductive absorption material that is formed on an opposing side of the second conductor layer from the first absorption layer; and
a third conductor layer; and
removing portions of the stack of layers lying laterally outside a region desired to be the channel region of the device, thereby forming the multi-layered gate structure having multiple alternating layers of the metal oxide and the conductive absorption material between the gate oxide layer and the third conductor layer overlying the channel region of the device.
2. The method of claim 1 , wherein the first and second conductor layers comprise molybdenum-silicon-oxide, the third conductor layer comprises a polycrystalline semiconductor and the first and second absorption layers comprise molybdenum-silicide.
3. The method of claim 1 wherein the conductive absorption material is a metal silicide.
4. The method of claim 1 wherein the conductive absorption material is molybdenum silicide.
5. A method for forming a semiconductor device on a semiconductor substrate having an upper surface, wherein the semiconductor device comprises a multilayered gate structure resistant to migration of a mobile species and overlying a channel region of the device, the method comprising:
forming on the upper surface of the semiconductor substrate a stack of overlying layers in various orders, comprising:
a gate oxide layer having an interface in contact with the upper surface;
a first conductor layer comprising a metal oxide;
a second conductor layer; and
an absorption layer of a conductive absorption material different from the metal oxide of the first conductor layer and having a higher affinity for oxygen than the first conductor layer for reducing migration of the mobile species toward the interface, wherein the absorption layer is formed after the first conductor layer and before the second conductor layer and lies therebetween; and then
repeating multiple times the step of first forming the first conductor and then forming the absorption layer so as to provide pairs of alternating layers of the metal oxide and the conductive absorption material overlying the gate oxide and underlying the second conductor; and
removing portions of the stack of layers lying laterally outside a region desired to be the channel region of the device, thereby forming the multi-layered gate structure overlying the channel region of the device.
6. The method of claim 5 , wherein the first conductor layer comprises molybdenum-silicon-oxide, the second conductor layer comprises a polycrystalline semiconductor and the absorption layer comprises molybdenum-silicide.
7. The method of claim 5 , wherein the gate oxide layer comprises oxides of Hf, Zr or HfZr.
8. The method of claim 5 , wherein the first conductor layer comprises one or more silicates of Mo, Nb, V, Re, Ru, Os, Rh, Ir, Pd, or nitrides of such silicates.
9. The method of claim 5 wherein the absorption layer comprises at least one metallic element in common with the first conductor layer.
10. The method of claim 5 , wherein the semiconductor device is a PMOS device and the first conductor layer comprises an oxide of MoSi and the absorption layer comprises MoSi.
11. The method of claim 5 , wherein the second conductor layer comprises a polycrystalline semiconductor, the absorption layer comprises molybdenum-silicide, the gate oxide layer comprises oxides of Hf, Zr or HfZr, and the first conductor layer comprises one or more silicates of Mo, Nb, V, Re, Ru, Os, Rh, Ir, Pd, or nitrides of such silicates.
12. The method of claim 5 wherein the conductive absorption material is a metal silicide.
13. The method of claim 5 wherein the conductive absorption material is molybdenum silicide.
14. A method for forming a semiconductor device with a multilayered gate structure resistant to migration of a mobile species and overlying a channel region of the device, comprising:
providing a semiconductor substrate having an upper surface;
forming on the upper surface a stack of overlying layers in various orders, comprising:
a gate oxide layer having an interface in contact with the upper surface;
a first conductor layer comprising a metal oxide;
a second conductor layer; and
an absorption layer of a conductive absorption material different from the metal oxide of the first conductor layer and having a higher affinity for oxygen than the first conductor layer for reducing migration of the mobile species toward the interface, wherein the absorption layer is formed after the gate oxide and before the first conductor layer and lies therebetween; and then
repeating multiple times the steps of first forming the absorption layer and then forming the first conductor so as to provide pairs of alternating layers of the metal oxide and the conductive absorption material overlying the gate oxide and underlying the second conductor; and
removing portions of the stack of layers lying laterally outside a region desired to be the channel region of the device, thereby forming the multi-layered gate structure overlying the channel region of the device.
15. The method of claim 14 , wherein the first conductor layer comprises molybdenum-silicon-oxide, the second conductor layer comprises a polycrystalline semiconductor and the absorption layer comprises molybdenum-silicide.
16. The method of claim 14 , wherein the gate oxide layer comprises oxides of Hf, Zr or HfZr.
17. The method of claim 14 , wherein the first conductor comprises one or more silicates of Mo, Nb, V, Re, Ru, Os, Rh, Ir, Pd, or nitrides of such silicates.
18. The method of claim 14 wherein the absorption layer comprises at least one metallic element in common with the first conductor layer.
19. The method of claim 14 , wherein the semiconductor device is a PMOS device and the first conductor layer comprises an oxide of MoSi and the absorption layer comprises MoSi.
20. The method of claim 14 , wherein the second conductor layer comprises a polycrystalline semiconductor, the absorption layer comprises molybdenum-silicide, the gate oxide layer comprises oxides of Hf, Zr or HfZr, and the first conductor layer comprises one or more silicates of Mo, Nb, V, Re, Ru, Os, Rh, Ir, Pd, or nitrides of such silicates.
21. The method of claim 14 wherein the conductive absorption material is a metal silicide.
22. The method of claim 14 wherein the conductive absorption material is molybdenum silicide.