Temperature compensation device and method thereof
A device and method for temperature compensation of an electronic device are disclosed. The device includes a temperature bias controller with a temperature sensor. A bias signal based upon a signal from the temperature sensor is provided to a first gate of a multiple fin gate field effect transistor (multigate FinFET) transistor of a functional block. A second gate of the multigate FinFET transistor receives a control signal to control its operation within the functional block. In this configuration the first gate of the multigate FinFET transistor can be used for temperature compensation while the second gate is used for functional operation of the transistor. Specific embodiments of the present disclosure will be better understood with respect to the figures.
1. An electronic device, comprising:
a temperature bias controller comprising a first temperature sensor coupled to a first bias output of the temperature bias controller, and a second temperature sensor coupled to a second bias output of the temperature bias controller;
a first multigate FinFET transistor comprising a first gate and a second gate, the second gate coupled to the first bias output of the temperature bias controller; and
a second multigate FinFET transistor including a first gate and a second gate, the second gate coupled to the second bias output of the temperature bias controller.
2. The electronic device of claim 1 , wherein the first gate of the first multigate FinFET transistor is coupled to a first functional control module.
3. The electronic device of claim 1 , wherein the temperature bias controller further comprises a first bias controller comprising an input coupled to the first temperature sensor and the first bias output of the temperature bias controller.
4. The electronic device of claim 1 , wherein the first temperature sensor is an active temperature sensor.
5. The electronic device of claim 1 , wherein the first temperature sensor is located closer to the first multigate FinFET transistor than to the second multigate FinFET transistor.
6. The electronic device of claim 1 , wherein the first temperature sensor is an active temperature sensor and the second temperature sensor is a passive temperature sensor.
7. The electronic device of claim 1 wherein the temperature bias controller further comprises a third bias output coupled to the second temperature sensor; and the device further comprising:
third multigate FinFET transistor including a first gate and a second gate, the second gate coupled to the second bias output of the temperature bias controller.
8. An electronic device, comprising:
a temperature bias controller comprising a first temperature sensor coupled to a first bias output of the temperature bias controller, a second temperature sensor coupled to the first bias output of the temperature bias controller, and a signal switching module to selectively electronically couple one of the first temperature sensor and the second temperature sensor to the first bias output; and
first multigate FinFET transistor comprising a first gate and a second gate, the second gate coupled to the first bias output of the temperature bias controller.
9. An electronic device, comprising:
temperature bias controller comprising a first temperature sensor, a first bias controller comprising an input coupled to the first temperature sensor, a second bias controller comprising an input coupled to the first temperature sensor, a signal switching module to selectively electronically couple one of the first bias controller and the second bias controller to a first bias output of the temperature bias controller; and
a first multigate FinFET transistor comprising a first gate and a second gate, the second gate coupled to the first bias output of the temperature bias controller.
10. The electronic device of claim 9 , wherein the temperature bias controller further comprises:
second temperature sensor.
11. A method, comprising:
receiving at a first gate of a first multigate FinFET transistor a control signal from a functional module;
selecting one of a plurality of temperature sensors for generating the first bias signal; and
receiving at a first time at a second gate of the first multigate FinFET transistor a first bias signal from a temperature bias controller, wherein the presence of the control signal and the first bias signal at the first multigate FinFET transistor overlap in time and the first bias signal corresponds to a first detected temperature.
12. The method of claim 11 , further comprising:
receiving at a second time at the second gate of the first multigate FinFET transistor a second bias signal from the temperature bias controller, wherein the second bias signal corresponds to a second detected temperature different from the first detected temperature.
13. The method of claim 11 , further comprising receiving at the first time the first bias signal at a first gate of a second multigate FinFET transistor.
14. The method of claim 11 , further comprising:
receiving at the first time a second bias signal from the temperature bias controller at a first gate of a second multigate FinFET transistor, the second bias signal indicating a second detected temperature level.