IP Library › Granted Patent US 7,432,150
Granted Patent B2
US 7,432,150 · App. 11/351,610 · Granted Oct 7, 2008

Method of manufacturing a magnetoelectronic device

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Quick Facts
Patent No.
US 7,432,150
App. No.
11/351,610
Granted
Oct 7, 2008
Kind
B2
Abstract

A method of manufacturing a magnetoelectronic device includes providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material, and implanting a magnetic material into the electrically insulating material. The magnetic material increases the magnetic permeability of the electrically insulating material. The implant may be a blanket or a targeted implant.

Claims (58)

1. A method of manufacturing a magnetoelectronic device, the method comprising:

providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material; and

implanting a magnetic material into the electrically insulating material, wherein:

the magnetic material increases a magnetic permeability of the electrically insulating material; and

implanting the magnetic material in a concentration of between approximately 5 percent and approximately 30 percent by atomic weight of the electrically insulating material.

2. The method of claim 1 wherein:

implanting the magnetic material comprises implanting iron or an alloy thereof.

3. The method of claim 1 wherein:

implanting the magnetic material comprises implanting cobalt or an alloy thereof.

4. The method of claim 1 wherein:

implanting the magnetic material comprises implanting nickel or an alloy thereof.

5. The method of claim 1 wherein:

implanting the magnetic material comprises:

implanting a first portion of the magnetic material into the electrically insulating material; and

afterwards, implanting a second portion of the magnetic material into the electrically insulating material.

6. The method of claim 1 wherein:

implanting the magnetic material comprises:

performing a targeted implant of the magnetic material into the electrically insulating material.

7. The method of claim 1 wherein:

implanting the magnetic material comprises:

performing a blanket implant of the magnetic material into the electrically insulating material.

8. The method of claim 7 wherein:

implanting the magnetic material comprises:

implanting the magnetic material in a concentration of between approximately 15 percent and approximately 25 percent by atomic weight of the electrically insulating material.

9. A method of manufacturing a magnetoelectronic device, the method comprising:

providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material; and

implanting a magnetic material into the electrically insulating material, wherein:

the magnetic material increases a magnetic permeability of the electrically insulating material; and

implanting the magnetic material comprises:

implanting the magnetic material in a concentration of at least approximately 5 percent by atomic weight of the electrically insulating material.

10. The method of claim 9 wherein:

implanting the magnetic material comprises implanting iron or an alloy thereof.

11. The method of claim 9 wherein:

implanting the magnetic material comprises implanting cobalt or an alloy thereof.

12. The method of claim 9 wherein:

implanting the magnetic material comprises implanting nickel or an alloy thereof.

13. The method of claim 9 wherein:

implanting the magnetic material comprises:

implanting the magnetic material in a concentration of at least approximately 15 percent by atomic weight of the electrically insulating material.

14. The method of claim 9 wherein:

implanting the magnetic material comprises:

implanting the magnetic material in a concentration of between approximately 15 percent and approximately 25 percent by atomic weight of the electrically insulating material.

15. The method of claim 14 wherein:

implanting the magnetic material comprises implanting iron or an alloy thereof.

16. The method of claim 14 wherein:

implanting the magnetic material comprises implanting cobalt or an alloy thereof.

17. The method of claim 14 wherein:

implanting the magnetic material comprises implanting nickel or an alloy thereof.

18. The method of claim 9 wherein:

implanting the magnetic material comprises:

implanting a first portion of the magnetic material into the electrically insulating material; and

afterwards, implanting a second portion of the magnetic material into the electrically insulating material.

19. The method of claim 9 wherein:

implanting the magnetic material comprises:

performing a targeted implant of the magnetic material into the electrically insulating material.

20. The method of claim 9 wherein:

implanting the magnetic material comprises:

performing a blanket implant of the magnetic material into the electrically insulating material.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
PATENT RELEASE Recorded Aug 17, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 039707/0471 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0807 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2015
From: FREESCALE SEMICONDUCTOR, INC.
To: EVERSPIN TECHNOLOGIES, INC.
Reel/Frame 036084/0057 →
RELEASE OF SECURITY INTEREST Recorded Jul 30, 2010
From: CITIBANK, N.A.
To: EVERSPIN TECHNOLOGIES, INC.
Reel/Frame 024767/0398 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: EVERSPIN TECHNOLOGIES, INC.
Reel/Frame 022597/0062 →
SECURITY AGREEMENT Recorded Mar 12, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 022380/0409 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 10, 2006
From: DURLAM, MARK A.; KERSZYKOWSKI, GLORIA J.; RIZZO, NICHOLAS D.; SALTER, ERIC J.; WISE, LOREN J.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 017569/0748 →