Granted Patent B2

US 7,605,450 · App. 11/359,544 · Granted Oct 20, 2009

Abstract

Claims (17)

1. A high frequency arrangement comprising:

an integrated high frequency circuit operating at a given operating frequency;

a first bond pad being electrically connected by a first electrical supply line having an inductance to a housing terminal and/or another circuit, the first electrical supply line being a bond wire or a solder bump; and

a dielectric that adjoins the first bond pad so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, wherein the first capacitance and the first supply line provide a first resonant frequency associated with the high-frequency circuit at a value substantially equal to the operating frequency of the high-frequency circuit.

2. The high frequency arrangement according to claim 1 , further comprising a second bond pad being electrically connected in parallel to the housing terminal and/or the additional circuit by a second supply line, the second bond pad being conductively connected to the electrically conductive region.

3. The high frequency arrangement according to claim 1 , further comprising a third bond pad being electrically connected in parallel to the housing terminal and/or the additional circuit by a third supply line having an inductance, wherein the third bond pad adjoins a dielectric so that the third bond pad forms a second capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and wherein the second capacitance and the third supply line provide a second resonant frequency associated with the high-frequency circuit in the vicinity of the operating frequency of the high-frequency circuit but different from the first resonant frequency.

4. The high frequency arrangement according to claim 3 , further comprising additional parallel circuits formed of additional supply lines and additional bond pads adjoining dielectrics, which provide additional resonant frequencies.

5. The high frequency arrangement according to claim 3 , wherein the first capacitance has a different geometry or a different surface area than the second capacitance.

6. The high frequency arrangement according to claim 1 , wherein the conductive region is conductively connected to a semiconductor region of an active integrated component of the integrated high-frequency circuit or to an emitter of a high-frequency bipolar transistor or of a high-frequency tetrode.

7. The high frequency arrangement according to claim 2 , wherein at least the second supply line forms a negative feedback for the integrated high frequency circuit, which is reduced for at least the first resonant frequency.

8. The high frequency arrangement according to claim 1 , wherein the dielectric has silicon dioxide and has a thickness less than 100 nm.

9. The high frequency arrangement according to claim 1 , wherein the conductive region has a metal.

10. A high frequency arrangement comprising:

a high frequency circuit operating at a given operating frequency, the high frequency circuit being provided on a semiconductor chip that is connected to a housing terminal and/or an additional circuit by an electrical supply line having an inductance, the electrical supply line being a bond wire or a solder bump; and

a series-resonant circuit being connected in parallel with the electrical supply line and providing a resonant frequency substantially equal to an operating frequency of the high-frequency circuit.

11. The high frequency arrangement according to claim 1 , wherein the high frequency arrangement is provided in a radar system, a radio communications system, or a mobile telephony system.

12. The high frequency arrangement according to claim 1 , wherein the dielectric has silicon dioxide and has a thickness less than 50 nm.

Assignments (11)