Semiconductor memory device
View Patent ↗A memory cell MC includes nMOS transistors for a transfer gate configured to be paired with each other, and one capacitor for data storage connected to the nMOS transistor. A gate electrode of the nMOS transistor is connected to a word line WL, and a drain is connected to a bit line BL. A gate electrode of the nMOS transistor is connected to a word line /WL, and a drain and a source are connected to a ground. The capacitor is connected between a source of the nMOS transistor and the ground. A Y selector circuit is connected between a differential bit line BL, /BL and a differential data line DL, /DL. The Y selector circuit has two pairs of nMOS transistors configured to be paired transistors, respectively.
1. A semiconductor memory device comprising:
memory cells having at least a pair of paired transistors connected to a word line and a bit line, the paired transistors being formed in a same well region so as to be adjacent to each other, and operating in a differential manner; and
a sense amplifier circuit having at least a pair of paired transistors connected to the bit line, the paired transistors being formed in a same well region so as to be adjacent to each other, and operating in a differential manner.
2. The semiconductor memory device according to claim 1 , further comprising a control circuit which controls operations of the memory cells and sense amplifier circuit, wherein the control circuit has paired transistors formed in a same well region so as to be formed to each other and operating in a differential manner.
3. The semiconductor memory device according to claim 1 , wherein the word line and bit line are composed of differential signal paired lines, respectively.
4. The semiconductor memory device according to claim 3 , wherein a characteristic impedance of the differential signal paired lines is obtained as a value ranging from 50Ω to 200Ω.
5. The semiconductor memory device according to claim 1 , wherein the memory cells each include paired transistors for a transfer gate and a capacitor connected to either one of the paired transistors, the capacitor storing data.
6. The semiconductor memory device according to claim 5 , wherein the capacitor is connected between either one of the paired transistors for a transfer gate and a supply node of a reference potential.
7. The semiconductor memory device according to claim 5 , wherein the capacitor has a structure in which an insulator made of a high k material is sandwiched between a pair of metal electrodes.
8. The semiconductor memory device according to claim 1 , wherein the memory cells each include a first transistor for a transfer gate, a second transistor configured to be paired with the first transistor; and a flip flop circuit connected to the first transistor, the flip flop circuit storing data.
9. The semiconductor memory device according to claim 1 , wherein the paired transistors are formed with a planer distance such that charge exchange is mutually carried out and high speed state transition is accelerated at the time of transition of a control signal to be supplied to the paired transistors.
10. The semiconductor memory device according to claim 9 , wherein a maximum value dmax of the planar distance “d” is given by:
dmax=tr μE=0.35 f μE
where the mobility of charges in the well region is μ (cm 2 /Sv); an electric field intensity between line regions of the paired transistors is E (V/cm); a transition time of the control signal is tr (s); and a frequency of the control signal is f (1/s).
11. The semiconductor memory device according to claim 1 , further comprising paired lines having a characteristic impedance equal to or smaller than an impedance obtained by make parallel to each other ON resistances of all transistors including a transistor in the sense amplifier circuit, the paired lines supplying power supply voltages at a high potential side and at a low potential side to the sense amplifier circuit.