In situ optical surface temperature measuring techniques and devices

1. A temperature sensor in a chamber comprising:

a test substrate removeably disposed in said chamber, said test substrate having a surface, said surface having a recess therein;

a layer of luminescent material, disposed in the recess, that emits electromagnetic radiation having a detectable optical characteristic functionally dependent on the temperature of the test substrate;

an optical window that seals said layer of luminescent material in the recess;

a chuck disposed in said chamber; and

an optical fiber light waveguide that penetrates the chuck, the optical fiber light waveguide having an end, wherein the optical fiber light waveguide is in optical communication with the layer of luminescent material and wherein there is a spacing between the end of the optical fiber light waveguide and the optical window such that the end of the optical fiber light waveguide does not touch the optical window or the layer of luminescent material, and wherein the test substrate is positioned in the chamber so that the layer of luminescent material faces the end of the optical fiber light waveguide that penetrates the chuck; and wherein the optical fiber light waveguide does not completely penetrate the chuck.

2. The temperature sensor of claim 1 , further comprising an optical connector in optical communication with the optical fiber light waveguide and configured to transmit the electromagnetic radiation from the optical fiber light waveguide.

3. The temperature sensor of claim 1 , being configured to measure the temperature of a process selected from the group consisting of:

physical vapor deposition;

dielectric etching;

optical coating of glass substrates;

chemical vapor deposition;

metal organic vapor deposition;

sputtering;

vaporization;

low pressure chemical vapor deposition; and

atomic layer deposition.

4. The temperature sensor of claim 1 , wherein the layer of luminescent material surface has a known emissivity and emits radiation within an infrared range.

5. The temperature sensor of claim 1 , wherein the test substrate is a semiconductor wafer or a flat panel display.

6. The temperature sensor of claim 1 , wherein the layer of luminescent material is wholly contained within the recess.

7. The temperature sensor of claim 1 , wherein the optical window is wholly contained within the recess.

8. The temperature sensor of claim 1 , wherein the optical window is made of sapphire.

9. The temperature sensor of claim 1 , the chamber further comprising a source of excitation radiation and wherein excitation radiation is passed through the optical window by said source of excitation radiation and said layer of luminescent material emits said electromagnetic radiation having said detectable optical characteristic in response to said excitation radiation.

10. The temperature sensor of claim 1 , wherein the chamber is a heating chamber.

11. The temperature sensor of claim 1 , wherein the chamber is a general vacuum processing chamber.

12. The temperature sensor of claim 1 , wherein the chuck supports said test substrate.

13. The temperature sensor of claim 12 , wherein the test substrate is horizontally supported by the chuck.

14. The temperature sensor of claim 12 , wherein the chuck is cooled by circulation of a coolant through the chuck from an outside supply of coolant.

15. The temperature sensor of claim 12 , wherein the test substrate is vertically supported by the chuck.

16. The temperature sensor of claim 1 , wherein the test substrate is heated by a radiant heater.

17. The temperature sensor of claim 1 , further comprising:

a photodetector in optical communication with the optical fiber light waveguide; and

a measuring circuit card or instrument in electrical communication with the photodetector, the measuring circuit card or instrument configured to provide an output signal of a measured temperature of the test substrate.

18. The temperature sensor of claim 1 , wherein the chamber measures a temperature of the surface of the test substrate.

19. The temperature sensor of claim 1 , wherein the detectable optical characteristic is a decaying characteristic.

20. The temperature sensor of claim 1 , further comprising:

a plurality of posts on the chuck, and wherein the test substrate is overlayed on the plurality of posts.

21. The temperature sensor of claim 1 ,

wherein the light waveguide does not extend all the way to a surface of the chuck and wherein the test substrate is overlayed directly on the surface of the chuck.

22. The temperature sensor of claim 1 wherein the optical fiber light waveguide is fixedly held within the chuck during an entire process.

23. A test device for measuring a temperature in a processing step, the test device comprising:

a test substrate, said test substrate having a surface, said surface having a recess therein, wherein said test substrate is dimensioned for removeable placement in a chamber;

a layer of luminescent material wholly contained in the recess, wherein the luminescent material emits electromagnetic radiation has a detectable optical characteristic that is functionally dependent on the temperature of the test substrate in response to a source of excitation radiation in a processing chamber; and

an optical window that seals said layer of luminescent material in the recess in the surface of the substrate, wherein the optical window is wholly contained within the recess.

24. The test device of claim 23 , wherein the test substrate is a semiconductor wafer shape or a flat panel display.

25. The test device of claim 23 , wherein the optical window is made of sapphire.

26. The test device of claim 23 , wherein the processing step is selected from the group consisting of:

physical vapor deposition;

dielectric etching;

optical coating of glass substrates;

chemical vapor deposition;

metal organic vapor deposition;

sputtering;

vaporization;

low pressure chemical vapor deposition; and

atomic layer deposition.

27. The test device of claim 23 , wherein the layer of luminescent material has a known emissivity and emits radiation within an infrared range.