Apparatus and method for enhanced critical dimension scatterometry
View Patent ↗Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.
1. A scatterometer for evaluating microstructures on workpieces, comprising:
a laser and/or lamp configured to produce a beam of radiation having a wavelength;
an optical system having a first optics assembly including an object lens assembly configured to (a) focus the beam in an area at an object focal plane, and (b) present return radiation scattered from a microstructure in a radiation distribution at a second focal plane;
a detector comprising a CMOS imager having a die with an image sensor, focal optics, and packaging defining an enclosed compartment in which the focal optics and the image sensor are fixed with respect to each other without a cover having parallel, flat surfaces between the image sensor and the focal optics; and
a polarizing beam splitter in a path of the return radiation between the object lens assembly and the detector to separate the p- and s-polarized components of the return radiation from each other.
2. A scatterometer for evaluating microstructures on workpieces, comprising:
a laser and/or lamp configured to produce a beam of radiation having a wavelength;
an optical system having a first optics assembly including an object lens assembly configured to (a) focus the beam in an area at an object focal plane, and (b) present return radiation scattered from a microstructure in a radiation distribution at a second focal plane;
a detector comprising a CMOS imager having a die with an image sensor, focal optics, and packaging defining an enclosed compartment in which the focal optics and the image sensor are fixed with respect to each other without a cover having parallel, flat surfaces between the image sensor and the focal optics; and
a navigation system having a light source separate from the irradiation source and navigation optics having a low magnification capability for locating a general area of the microstructure a high magnification capability for accurately aligning the object lens with the microstructure.
3. The scatterometer of claim 1 wherein the object lens assembly is configured to focus the conditioned beam to a spot size not greater than 30 μm.
4. The scatterometer of claim 1 wherein the irradiation source comprises a laser configured to generate a first beam having a first wavelength and a second beam having a second wavelength different than the first wavelength.
5. The scatterometer of claim 4 wherein the first wavelength is approximately 266 nm and the second wavelength is approximately 405 nm.
6. The scatterometer of claim 1 wherein the wavelength is approximately 200 nm to approximately 475 nm.
7. The scatterometer of claim 1 wherein the wavelength is approximately 375 nm to approximately 475 nm.
8. The scatterometer of claim 1 wherein the first wavelength is approximately 244 nm and the second wavelength is approximately 457 nm.
9. The scatterometer of claim 1 wherein the wavelength is approximately one of 405 nm or 457 nm.
10. The scatterometer of claim 1 , further comprising a computer operatively coupled to the detector, wherein the computer includes a database having a plurality of simulated radiation distributions corresponding to different sets of parameters of the microstructure and a computer-operable medium containing instructions that cause the computer to identify a simulated radiation distributions that adequately fits to the representation of the radiation distribution produced by the detector.
11. The scatterometer of claim 1 , further comprising:
a calibration member having a first reflectivity of the wavelength located proximate to a workpiece site; and
a computer operatively coupled to the detector, wherein the computer includes a computer-operable medium containing instructions that determine a reference reflectance using a first detected reflectance from the first calibration member and a second detected reflectance from an area separate from the calibration member.
12. The scatterometer of claim 11 wherein the calibration member comprises a mirror having a reflectance greater than approximately 95% and capable of reflecting radiation through a range of altitude angles of 0° to 89°, and the second reflectance is from free space.
13. The scatterometer of claim 1 wherein the first optics assembly comprises a diffuser that produces a diffuse randomized beam.
14. The scatterometer of claim 1 wherein the first optics assembly comprises an order selector configured to limit the angular range of various diffraction orders.
15. The scatterometer of claim 1 wherein the first optics assembly is configured to diffuse and randomize the beam; and
the scatterometer further comprises a field stop having an aperture and an illumination lens through which the diffused and randomized beam pass.
16. The scatterometer of claim 1 wherein the object lens assembly comprises a plurality of achromatic lenses.
17. The scatterometer of claim 1 , further comprising a plurality of optical heads, wherein individual optical heads are suitable for a unique bandwidth of radiation.
18. The scatterometer of claim 1 , further comprising a reference detector configured to measure changes in the beam from the irradiation source.
19. The scatterometer of claim 1 wherein the object lens assembly is further configured to simultaneously focus the conditioned beam at the object focal plane through at least (a) a 15° range altitude angles and (b) a 90° range of azimuth angles.
20. The scatterometer of claim 19 wherein the altitude angles are 0° to at least 70° and the azimuth angles are 0° to at least 180°.
21. The scatterometer of claim 19 wherein the altitude angles are 0° to at least 80° and the azimuth angles are 0° to at least 360°.
22. The scatterometer of claim 1 , further comprising a single detector to receive both the p- and s-polarized components of the return radiation, and wherein the polarizing beam splitter comprises a cube-type polarizing beam splitter.
23. A method of evaluating a microstructure on a workpiece, comprising:
generating a beam having a first wavelength;
irradiating a microstructure on a workpiece by passing the beam through an object lens assembly that focuses the beam to a focus area at an object focal plane, wherein the beam is focused through at least (a) a 15° range of altitude angles and (b) a 90° range of azimuth angles simultaneously;
presenting return radiation scattered from a microstructure on the workpiece in a radiation distribution at a second focal plane;
detecting the radiation distribution using a CMOS imager having a die with an image sensor, focal optics, and packaging defining an enclosed compartment in which the focal optics and the image sensor are fixed with respect to each other without a cover having parallel, flat surfaces between the image sensor and the focal optics; and
polarizing the radiation distribution using a polarizing beam splitter configured to present separate images of p- and s-polarized components of the return radiation before detecting the radiation with the CMOS imager;
detecting the separated images of both the p- and s-polarized components of the return radiation simultaneously on the CMOS imager; and
producing a representation of the p- and s-polarized components of the return radiation.
24. The method of claim 23 wherein the polarizing beam splitter comprises a cube-type polarizing beam splitter and the method further comprises directing the p- and s-polarized components of the return radiation along parallel paths such that the p-polarized component of the return radiation impinges upon a first region of the CMOS imager and the s-polarized component of the return radiation impinges simultaneously upon a second region of the CMOS imager.
25. The method of claim 23 wherein the object lens assembly is further configured to focus the conditioned beam on the object focal plane through a range of incidence angles having (a) altitude angles of 0° to at least about 70° and (b) azimuth angles of 0° to at least about 180°.
26. The method of claim 23 wherein the altitude angles are 0° to at least 80° and the azimuth angles are 0° to at least 360°.
27. The method of claim 23 wherein the wavelength is approximately 266 nm to approximately 475 nm.
28. The method of claim 23 wherein the wavelength is approximately 375 nm to approximately 475 nm.
29. The method of claim 23 wherein the wavelength is approximately 457 nm.
30. The method of claim 23 wherein the wavelength is approximately 405 nm.
31. The scatterometer of claim 22 wherein the image sensor of the CMOS imager is an array of pixels, and wherein the p- and s-polarized components of the return radiation impinges upon a first region of the array and the s-polarized component of the return radiation impinges simultaneously upon a second region of the array.
32. A scatterometer for evaluating microstructures on a workpiece, comprising:
an irradiation source that produces a first beam of radiation at a first wavelength;
a first optic member aligned with the path of the beam, the first optic member being configured to condition the beam;
an object lens assembly aligned with the path of the beam and positioned between the first optic member and a workpiece site, the object lens assembly being configured to (a) receive the conditioned beam, (b) focus the conditioned beam to a spot at an object focal plane, (c) receive return radiation in the first wavelength reflecting from a workpiece, and (d) present a radiation distribution of the return radiation in a second focal plane;
a detector positioned to receive the radiation distribution and configured to produce a representation of the radiation distribution;
a polarizing beam splitter in a path of the return radiation between the object lens assembly and the detector to separate the p- and s-polarized components of the return radiation from each other;
a navigation system operatively associated with the object lens assembly, the navigation system being configured to identify and locate a microstructure on the workpiece; and
an auto-focus system operatively coupled to at least one of the object lens assembly or the workpiece site, the auto-focus system being configured to position the microstructure at the object focal plane.
33. The scatterometer of claim 32 wherein the navigation system comprises a light source separate from the irradiation source and navigation optics having a low magnification capability for locating a general area of the micro structure and a high magnification capability for accurately aligning the object lens with the microstructure.
34. The scatterometer of claim 32 wherein the irradiation source comprises a laser configured to generate a first beam having a first wavelength and a second beam having a second wavelength different than the first wavelength.
35. The scatterometer of claim 32 , further comprising a computer operatively coupled to the detector, wherein the computer includes a database having a plurality of simulated radiation distributions corresponding to different sets of parameters of the micro structure and a computer-operable medium containing instructions that cause the computer to identify a simulated radiation distributions that adequately fits to the representation of the radiation distribution produced by the detector.
36. The scatterometer of claim 32 , further comprising:
a calibration member having a first reflectivity of the first wavelength located proximate to a workpiece site; and
a computer operatively coupled to the detector, wherein the computer includes a computer-operable medium containing instructions that determine a reference reflectance using a first detected reflectance from the first calibration member and a second detected reflectance from an area separate from the calibration member.
37. The scatterometer of claim 36 wherein the calibration member comprises a mirror having a reflectance greater than approximately 95% and capable of reflecting radiation through a range of altitude angles of 0° to 89°, and the second reflectance is from free space.
38. The scatterometer of claim 32 wherein the first optic member comprises at least one of a diffuser that produces a diffuse randomized beam and an order selector configured to limit the angular range of various diffraction orders.
39. The scatterometer of claim 32 wherein the first optic member configured to diffuse and randomize the beam; and
the scatterometer further comprises a field stop having an aperture and an illumination lens through which the diffused and randomized beam pass.
40. The scatterometer of claim 32 wherein the object lens assembly comprises a plurality of achromatic lenses.
41. The scatterometer of claim 32 , further comprising a plurality of optical heads, wherein individual optical heads are suitable for a unique bandwidth of radiation.
42. The scatterometer of claim 32 , further comprising a reference detector configured to measure changes in the beam from the irradiation source.
43. The scatterometer of claim 38 , further comprising a single detector to receive both the p- and s-polarized components of the return radiation, and wherein the polarizing beam splitter comprises a cube-type polarizing beam splitter.