Manufacturing method for electronic component, electronic component, and electronic equipment
View Patent ↗A manufacturing method for electronic device, includes: preparing a first substrate having a plurality of first regions; preparing a second substrate having a plurality of second regions; facing the first region and the second region each other, and connecting the first substrate and the second substrate while disposing at least a part of a functional element within a space between the first region and the second region; obtaining a plurality of first divisional substrates by cutting the first substrate at each of the first regions, after the connecting of the first substrate and the second substrate; forming a sealing film covering the plurality of the first divisional substrates on the second substrate, after cutting the first substrate; obtaining a plurality of second divisional substrates by cutting the second substrate at each of the second regions, after forming the sealing film; and obtaining a plurality of individual electronic devices.
1. A manufacturing method for electronic device, comprising:
preparing a first substrate having a plurality of first regions;
preparing a second substrate having a plurality of second regions;
facing the first region and the second region each other, and connecting the first substrate and the second substrate while disposing at least a part of a functional element within a space between the first region and the second region;
obtaining a plurality of first divisional substrates by cutting the first substrate at each of the first regions, after the connecting of the first substrate and the second substrate;
forming a sealing film covering the plurality of the first divisional substrates on the second substrate, after cutting the first substrate;
obtaining a plurality of second divisional substrates by cutting the second substrate at each of the second regions, after forming the sealing film; and
obtaining a plurality of individual electronic devices.
2. The manufacturing method for electronic device according to claim 1 , wherein the sealing film is metallic film.
3. The manufacturing method for electronic device according to claim 2 , wherein the material of the sealing film is any one of chrome, titanium, copper, aluminum, or titanium-tungsten.
4. The manufacturing method for electronic device according to claim 1 , wherein the sealing film is inorganic film.
5. The manufacturing method for electronic device according to claim 4 , wherein the material of the sealing film is any one of silicon oxide, silicon nitride, alumina, or polysilazane.
6. The manufacturing method for electronic device according to claim 1 , wherein the sealing film is resin.
7. The manufacturing method for electronic device according to claim 6 , wherein the material of the sealing film is any one of high-density polyethylene, vinylidene chloride, polyvinyl alcohol, nylon, and ethylene vinyl alcohol.
8. The manufacturing method for electronic device according to claim 1 , wherein the sealing film is a laminated structure containing organic film and inorganic film.
9. A manufacturing method for electronic device, comprising:
preparing a first substrate having a plurality of first regions;
preparing a second substrate having a plurality of second regions;
obtaining a plurality of first divisional substrates by cutting the first substrate at each of the first regions;
facing each of the plurality of the first divisional substrates and each of the plurality of the second regions each other, and connecting the plurality of the first divisional substrates and the second substrate while disposing at least a part of a functional element within a space between the first region and the second region, after forming the plurality of the first divisional substrates;
forming a sealing film covering the plurality of the first divisional substrates on the second substrate, after connecting the plurality of the first divisional substrates and the second substrate;
obtaining a plurality of second divisional substrates by cutting the second substrate at each of the second regions, after forming the sealing film; and
obtaining a plurality of individual electronic devices.
10. The manufacturing method for electronic device according to claim 9 , wherein the sealing film is metallic film.
11. The manufacturing method for electronic device according to claim 10 , wherein the material of the sealing film is any one of chrome, titanium, copper, aluminum, or titanium-tungsten.
12. The manufacturing method for electronic device according to claim 9 , wherein the sealing film is inorganic film.
13. The manufacturing method for electronic device according to claim 12 , wherein the material of the sealing film is any one of silicon oxide, silicon nitride, alumina, or polysilazane.
14. The manufacturing method for electronic device according to claim 9 , wherein the sealing film is resin.
15. The manufacturing method for electronic device according to claim 14 , wherein the material of the sealing film is any one of high-density polyethylene, vinylidene chloride, polyvinyl alcohol, nylon, and ethylene vinyl alcohol.
16. The manufacturing method for electronic device according to claim 9 , wherein the sealing film is a laminated structure containing organic film and inorganic film.