High power silicon carbide (SiC) PiN diodes having low forward voltage drops
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (V R ) from about 3.0 kV to about 10.0 kV and a forward voltage (V F ) of less than about 4.3 V.
1. A Silicon Carbide (SiC) PiN Diode having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V, wherein the VF is substantially stable during operation of the PiN Diode and wherein the SiC PiN Diode has an average forward current (IF) of less than about 420 A when operated at a temperature of between 25° C. and 530° C.,
wherein the SiC PiN Diode is a 10 kV, 4H—SiC PiN diode, the SiC PiN Diode further comprising:
a conducting n-type SiC substrate;
an n-type SiC drift layer on the substrate;
a p-type SiC anode injection layer on the n-type drift layer, the p-type SiC Anode injection layer having first and second portions,
wherein the first portion on the drift layer is a p+ layer having a first carrier concentration;
wherein the second portion is a p++ layer having a second carrier concentration greater than the first carrier concentration; and
wherein the diode has a blocking voltage (VR) of about 10.0 kV, an average IF of about 50 A, a reverse recovery time (trr) of about 300 nsec and a reverse recovery charge (Qrr) of about 1.6 μC when operating at a temperature of about 150° C.
2. The SiC PiN Diode of claim 1 having an average forward current (IF) of not greater than about 200 A.
3. The SiC PiN Diode of claim 1 having a forward current of about 2 A:
wherein a plurality of SiC PiN diodes are provided on a single chip, the chip being about 2.8 mm by 2.8 mm;
wherein the plurality of SiC PiN diodes have a VF of less than about 4.0 V, no less than about seventy percent of the plurality of SiC PiN diodes have a blocking voltage of about 6 kV and a reverse leakage current (IR) of not greater than 1.0 mA/cm2 and almost all of the plurality of SiC PiN diodes have a forward voltage drift of no greater than 0.1V.
4. The SiC PiN Diode of claim 3 , wherein the chip has a total yield of no less than about seventy percent.
5. The SiC PiN Diode of claim 1 having a forward current of about 5 A:
wherein a plurality of SiC PiN diodes are provided on a single chip, the chip being about 2.8 mm by about 4.85 mm;
wherein the plurality of SiC PiN diodes have a VF of less than about 4.0 V, no less than about seventy one percent of the plurality of SiC PiN diodes have a blocking voltage of about 6 kV and a reverse leakage current (IR) of not greater than 1.0 mA/cm2 and no less than about ninety six percent of the plurality of SiC PiN diodes have a forward voltage drift of no greater than 0.1 V.
6. The SiC PiN Diode of claim 5 , wherein the chip has a total yield of no less than about sixty five percent.
7. The SiC PiN Diode of claim 1 having a forward current of about 25 A:
wherein a plurality of SiC PiN diodes are provided on a single chip, the chip being about 5.4 mm by about 5.4 mm;
wherein the plurality of SiC PiN diodes have a VF of less than about 4.0 V, no less than about fifty percent of the plurality of SiC PiN diodes have a blocking voltage of about 6 kV and a reverse leakage current (IR) of not greater than 1.0 mA/cm2 and no less than about eighty seven percent of the plurality of SiC PiN diodes have a forward voltage drift of no greater than 0.1V.
8. The SiC PiN Diode of claim 7 , wherein the chip has a total yield of no less than about forty three percent.
9. The SiC PiN Diode of claim 1 having a forward current of about 5 A:
wherein a plurality of SiC PiN diodes are provided on a single chip, the chip being about 8.65 mm by about 8.55 mm;
wherein the plurality of SiC PiN diodes have a VF of less than about 4.0 V, no less than about sixty five percent of the plurality of SiC PiN diodes have a blocking voltage of about 6 kV and a reverse leakage current (IR) of not greater than 1.0 mA/cm2 and no less than about ninety six percent of the plurality of SiC PiN diodes have a forward voltage drift of no greater than 0.1V.
10. The SiC PiN Diode of claim 9 , wherein the chip has a total yield of no less than about sixty three percent.
11. The SiC PiN Diode of claim 1 , wherein the SiC PiN Diode comprises a 4H SiC PiN Diode.
12. The SiC PiN Diode of claim 1 , wherein a substantially stable VF during operation of the PiN Diode comprises a VF drift of about 0.1 V or less.
13. The SiC PiN Diode of claim 1 , wherein a substantially stable VF during operation of the PiN Diode comprises a VF that is approximately the same from time zero to at least about 200 hours.
14. The SiC PiN Diode of claim 1 , further comprising:
an aluminum implanted guard ring on the injection layer; and
a passivation layer on the injection layer and the guard ring.
15. The SiC PiN Diode of claim 14 , wherein the passivation layer comprises first and second portions, the first portion of the passivation layer being thermally grown and having a thickness of from about 600 Å to about 700 Å and the second portion of the passivation layer on the first portion and being deposited on the first portion and having a thickness of about 1 μm.
16. The SiC Pin Diode of claim 15 , wherein the passivation layer comprises silicon dioxide (SiO2) and/or polymide.
17. The SiC Pin Diode of claim 1 , wherein the first portion on the drift layer is a p+ layer having a carrier concentration of about 8×10 18 cm 3 ; and
wherein the second portion is a p++ layer having a carrier concentration of about 5×10 20 cm3.
18. A 4H Silicon Carbide (SiC) PiN Diode having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V, an average forward current of not greater than about 420 A when operated at a temperature of between 25° C. and 530° C.,
wherein the SiC PiN Diode is a 10 kV, 4H—SiC PiN diode, the SiC PiN Diode further comprising:
a conducting n-type SiC substrate;
an n-type SiC drift layer on the substrate;
a p-type SiC Anode injection layer on the n-type drift layer, the p-type SiC Anode injection layer having first and second portions,
wherein the first portion on the drift layer is a p+ layer having a carrier concentration of about 8×1018 cm3;
wherein the second portion is a p++ layer having a carrier concentration of about 5×1020 cm3; and
wherein the diode has a blocking voltage (VR) of about 10.0 kV, an average IF of about 50 A, a reverse recovery time (trr) of about 300 nsec and a reverse recovery charge (Qrr) of about 1.6 μC when operating at a temperature of about 150° C.
19. The SiC PiN Diode of claim 18 , wherein the n-type SiC drift layer defines a mesa, the SiC PiN Diode further comprising a guard ring termination structure in contact with the mesa.
20. The SiC PiN Diode of claim 18 , wherein the VF is substantially stable during operation of the PiN Diode.
21. The SiC PiN Diode of claim 20 , wherein a substantially stable VF during operation of the PiN Diode comprises a VF drift of about 0.1 V or less.
22. The SiC PiN Diode of claim 20 , wherein a substantially stable VF during operation of the PiN Diode comprises a VF that is approximately the same from time zero to at least about 200 hours.
23. A Silicon Carbide (SiC) PiN Diode having a reverse blocking voltage (VR) from about 3.0 kV to about 6.5 kV and a forward voltage (VF) of less than about 4.0 V, wherein the SiC PiN Diode has an average forward current (IF) of less than about 420 A when operated at a temperature of between 25° C. and 530° C.,
wherein the SiC PiN Diode is a 10 kV, 4H—SiC PiN diode, the SiC PiN Diode further comprising:
a conducting n-type SiC substrate;
an n-type SiC drift layer on the substrate;
a p-type SiC Anode injection layer on the n-type drift layer, the p-type SiC Anode injection layer having first and second portions,
wherein the first portion on the drift layer is a p+ layer having a first carrier concentration;
wherein the second portion is a p++ layer having a second carrier concentration greater than the first carrier concentration; and
wherein the diode has a blocking voltage (VR) of about 10.0 kV, an average IF of about 50 A, a reverse recovery time (trr) of about 300 nsec and a reverse recovery charge (Qrr) of about 1.6 μC when operating at a temperature of about 150° C.
24. A Silicon Carbide (SiC) PiN Diode having a reverse blocking voltage (VR) of no less than 7.0 kV to 10.0 kV and a forward voltage (VF) of less than about 4.3 V,
wherein the SiC PiN Diode is a 10 kV, 4H—SiC PiN diode, the SiC PiN Diode further comprising:
a conducting n-type SiC substrate;
an n-type SiC drift layer on the substrate;
a p-type SiC Anode injection layer on the n-type drift layer, the p-type SiC Anode injection layer having first and second portions,
wherein the first portion on the drift layer is a p+ layer having a first carrier concentration;
wherein the second portion is a p++ layer having a carrier concentration greater than the first carrier concentration; and
wherein the diode has a blocking voltage (VR) of about 10.0 kV, an average IF of about 50 A, a reverse recovery time (trr) of about 300 nsec and a reverse recovery charge (Qrr) of about 1.6 μC when operating at a temperature of about 150° C.
25. A Silicon Carbide (SiC) Pin Diode having a reverse blocking voltage (VR) from about 3.0 kV to about 7.0 kV and a forward voltage (VF) of less than about 4.0 V, wherein the SiC PiN Diode has an average forward current (IF) of less than about 420 A when operated at a temperature of between 25° C. and 530° C.,
wherein the SiC PiN Diode is a 10 kV, 4H—SiC PiN diode, the SiC PiN Diode further comprising:
a conducting n-type SiC substrate;
an n-type SiC drift layer on the substrate;
a p-type SiC Anode injection layer on the n-type drift layer, the p-type SiC Anode injection layer having first and second portions,
wherein the first portion on the drift layer is a p+ layer having a first carrier concentration;
wherein the second portion is a p++ layer having a second carrier concentration greater than the first carrier concentration; and
wherein a blocking voltage (VR) of about 10.0 kV, an average IF of about 50 A, a reverse recovery time (trr) of about 300 nsec and a reverse recovery charge (Qrr) of about 1.6 μC when operating at a temperature of about 150° C.
26. A Silicon Carbide (SiC) PiN Diode having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V, wherein the VF is substantially stable during operation of the PiN Diode and wherein the SiC PiN Diode has an average forward current (IF) of less than about 420 A when operated at a temperature of between 25° C. and 530° C., the SiC PiN Diode further comprising:
a reverse recovery time (trr) of between 150 nsec and 300 nsec and a reverse recovery charge (Qrr) of between 1.1 μC and 1.6 μC;
operating the SIC PiN Diode at a temperature of between 25° C. and 150° C., wherein a plurality of SiC PiN diodes are provided on a single chip, the chip being about 2.8 mm by 2.8 mm; and
wherein the chip has a total yield of no less than about forty three percent.