Method for manufacturing flip-chip type semiconductor device featuring nickel electrode pads, and plating apparatus used in such method

1. A method for manufacturing a semiconductor device, which comprises:

forming a photoresist layer over a semiconductor substrate;

forming openings in said photoresist layer;

forming one of a nickel layer and a nickel-based metal layer on or above said semiconductor substrate in each of said openings by using a first plating process;

washing said semiconductor substrate, on or above which said one of said nickel layer and said nickel-based metal layer is formed in each of said openings, with a pure water;

washing said semiconductor substrate, which is washed with said pure water, with one of an aqueous hydrochloric acid solution and an aqueous sulfuric acid solution;

after said washing said semiconductor substrate with one of an aqueous hydrochloric acid solution and an aqueous sulfuric acid solution, forming a protective metal layer on said one of said nickel layer and said nickel-based metal layer in each of said openings by using a second plating process; and

after said forming said protective metal layer on said one of said nickel layer and said nickel-based metal layer in each of said openings, removing said photoresist layer from said semiconductor substrate.

2. The method as set forth in claim 1 , wherein said semiconductor substrate includes a multi-layered wiring structure formed thereon, the formation of said one of said nickel layer and the nickel-based metal layer being carried out on a top surface of said multi-layered wiring structure.

3. The method as set forth in claim 2 , wherein said multi-layered wiring structure includes an uppermost wiring pattern layer formed on the top surface thereof, the formation of said one of said nickel layer and thee nickel-based metal layer being carried out on said uppermost wiring pattern layer.

4. The method as set forth in claim 3 , wherein said uppermost wiring pattern layer comprises one of aluminum and copper.

5. The method as set forth in claim 3 , wherein said one of said nickel layer and said nickel-based metal layer serves as an electrode pad on said uppermost wiring pattern layer.

6. The method as set forth in claim 5 , further comprising forming a metal seed layer on said uppermost wiring pattern layer before said plating process is executed, the formation of said one of said nickel layer and said nickel-based metal layer being carried out on said metal seed layer.

7. The method as set forth in claim 6 , wherein said metal seed layer comprises a copper layer.

8. The method as set forth in claim 1 , wherein said nickel-based metal layer comprises a nickel alloy layer.

9. The method as set forth in claim 1 , wherein said plating process comprises an electroplating process.

10. The method as set forth in claim 1 , wherein said plating process comprises an electroless plating process.

11. The method as set forth in claim 1 , wherein said aqueous hydrochloric acid solution has a density within a range from 1 to 20 wt %.

12. The method as set forth in claim 1 , wherein said aqueous sulfuric acid solution has a density within a range from 1 to 20 wt %.

13. The method as set forth in claim 1 , further comprising washing said one of said nickel layer and said nickel-based metal layer with pure water before said one of said nickel layer and said nickel-based metal layer is washed with one of the aqueous hydrochloric acid solution and the aqueous sulfuric acid solution.

14. The method as set forth in claim 1 , wherein said protective metal layer comprises one selected from a group consisting of tin, tin alloy, copper, copper alloy, gold and gold alloy.

15. The method as set forth in claim 1 , wherein said aqueous hydrochloric acid solution has a density within a range from 5 to 15 wt %.

16. The method as set forth in claim 1 , wherein said aqueous sulfuric acid solution has a density within a range from 5 to 15 wt %.