Method for separately optimizing spacer width for two transistor groups using a recess spacer etch (RSE) integration
View Patent ↗A method for making a semiconductor device is provided. In accordance with the method, a semiconductor structure is provided which comprises (a) a substrate ( 203 ), (b) first ( 219 ) and second ( 220 ) gate electrodes disposed over the substrate, and (c) first ( 223 ) and second ( 225 ) sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively. A first layer of photoresist ( 231 ) is disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered. The structure is then subjected to an etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.
1. A method for making a semiconductor device, comprising:
providing a semiconductor structure comprising (a) a substrate, (b) first and second gate electrodes disposed over the substrate, and (c) first and second sets of spacer structures disposed adjacent to said first and second gate electrodes, respectively;
disposing a first layer of photoresist over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered; and
subjecting the structure to a first etch which etches the first layer of photoresist and a portion of the first and second sets of spacer structures.
2. The method of claim 1 , wherein said first etch causes said first and second sets of spacer structures to be recessed with respect to said first and second gate electrodes, respectively.
3. The method of claim 1 , further comprising the step of stripping any portion of the first layer of photoresist which remains on the substrate after the first etch.
4. The method of claim 1 , further comprising the steps of subjecting the first and second gate electrodes to a silicidation reaction.
5. The method of claim 1 , further comprising the step of forming implant regions adjacent to each of said first and second sets of spacer structures.
6. The method of claim 1 wherein, after the first etch, any remaining portion of the first layer of photoresist is removed from the structure, and the structure is subjected to a second etch.
7. The method of claim 5 , wherein the implant regions define first source and drain regions adjacent to the first set of spacer structures, and wherein the first gate electrode, the first set of spacer structures and the first source and drain regions form a first transistor.
8. The method of claim 7 , wherein the implant regions define second source and drain regions adjacent to the second set of spacer structures, and wherein the second gate electrode, the second set of spacer structures and the second source and drain regions form a second transistor.
9. The method of claim 8 , further comprising the step of forming a layer of silicide over the source and drain regions of the first and second transistor.
10. The method of claim 8 , wherein the first layer of photoresist covers the second transistor.
11. The method of claim 6 , wherein the second etch is chemically distinct from the first etch.
12. A method for making a semiconductor device, comprising:
providing a semiconductor structure comprising (a) a first transistor region comprising a first gate electrode and a first set of spacer structures disposed adjacent to the first gate electrode;
(b) a second transistor region comprising a second gate electrode and a second set of spacer structures disposed adjacent to the second gate electrode;
disposing a first layer of photoresist over the structure such that the thickness of the photoresist in the first transistor region is w 1 , and the thickness of the photoresist in the second transistor region is w 2 , wherein w 1 ≠w 2 ; and
subjecting the structure to a first etch which etches the first layer of photoresist and a portion of at least one of the first and second sets of spacer structures.
13. The method of claim 12 , wherein the first etch etches a portion of each of the first and second sets of spacer structures.
14. The method of claim 12 , wherein the first layer of photoresist contains a first substance that reduces the rate of etching of the photoresist with respect to the first etch, and wherein the concentration of the first substance in the first transistor region is less than the concentration of the first substance in the second transistor region.
15. The method of claim 12 , wherein w 1 , w 2 >0.
16. The method of claim 12 , wherein further comprising the step of forming implant regions adjacent to each of said first and second sets of spacer structures.
17. The method of claim 16 , wherein the implant regions define first source and drain regions adjacent to the first set of spacer structures, and wherein the implant regions define second source and drain regions adjacent to the second set of spacer structures.
18. The method of claim 17 , further comprising the step of forming a layer of silicide over the source and drain regions in the first and second transistor regions.
19. A method for making a semiconductor device, comprising:
providing a semiconductor structure comprising (a) a first transistor region comprising a first gate electrode and a first set of spacer structures disposed adjacent to the first gate electrode; (b) a second transistor region comprising a second gate electrode and a second set of spacer structures disposed adjacent to the second gate electrode;
disposing a first layer of photoresist over the structure such that the thickness of the photoresist in the first transistor region is w 1 , and the thickness of the photoresist in the second transistor region is w 2 , wherein w 1 ≠w 2 ; and
subjecting the structure to a first etch which etches the first layer of photoresist and a portion of at least one of the first and second sets of spacer structures;
wherein the first layer of photoresist contains a first substance that reduces the rate of etching of the photoresist with respect to the first etch, and wherein the concentration of the first substance in the first transistor region is less than the concentration of the first substance in the second transistor region.
20. The method of claim 19 , wherein the first etch etches a portion of each of the first and second sets of spacer structures.
21. The method of claim 19 , wherein the implant regions define first source and drain regions adjacent to the first set of spacer structures, and wherein the implant regions define second source and drain regions adjacent to the second set of spacer structures.
22. The method of claim 19 , wherein w 1 , w 2 >0.
23. The method of claim 19 , wherein further comprising the step of forming implant regions adjacent to each of said first and second sets of spacer structures.
24. The method of claim 21 , further comprising the step of forming a layer of silicide over the source and drain regions in the first and second transistor regions.