Semiconductor device, stacked structure, and manufacturing method
View Patent ↗An array of electrically conductive members, formed around the edges of a semiconductor device or chip, penetrate from one major surface of the device to the other major surface. In an area located inward of this array, a multiplicity of thermally conductive members also penetrate from one major surface to the other major surface. The semiconductor device can be manufactured from a semiconductor wafer by creating holes that penetrate partway through the wafer, filling the holes with metal to form the electrically conductive members and thermally conductive members, and then grinding the lower surface of the wafer to expose the ends of the electrically conductive members and thermally conductive members before dicing the wafer into chips. The thermally conductive members improve heat dissipation performance when semiconductor chips of this type are combined into a stacked multichip package.
1. A semiconductor device comprising:
a semiconductor substrate having edges, a first major surface, and a second major surface, the first major surface having microelectronic circuits and first trenches thereon;
a plurality of electrically conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface, disposed in an array around edges of the first major surface and the second major surface;
a plurality of thermally conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface; and
a plurality of thermally conductive wires in the first trenches and connecting the thermally conductive members to the electrically conductive members.
2. The semiconductor device of claim 1 , wherein on each major surface of the semiconductor device, the plurality of thermally conductive members are disposed in an inner area, inward of the array of electrically conductive members.
3. The semiconductor device of claim 2 , wherein the thermally conductive members form an array aligned with the array of electrically conductive members.
4. The semiconductor device of claim 1 , wherein the thermally conductive wires connect each of the thermally conductive members to respectively different ones of the electrically conductive members, so that none of the electrically conductive members are connected to more than one of the thermally conductive members.
5. The semiconductor device of claim 1 , wherein the electrically conductive members and the thermally conductive members are copper or a copper alloy.
6. The semiconductor device of claim 1 , further comprising:
a plurality of electrical interconnection bumps on exposed surfaces of the electrically conductive members on one or both of the two major surfaces; and
a plurality of thermally conductive bumps on exposed surfaces of the thermally conductive members on one or both of the two major surfaces.
7. A stacked structure including a plurality of semiconductor devices, each of the semiconductor devices comprising:
a semiconductor substrate having edges, a first major surface, and a second major surface, the first major surface having microelectronic circuits and first trenches thereon;
a plurality of electrically conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface, disposed in an array around edges of the first major surface and the second major surface;
a plurality of thermally conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface; and
a plurality of thermally conductive wires in the first trenches and connecting the thermally conductive members to the electrically conductive members,
the semiconductor devices being stacked so that at least some of the thermally conductive members, disposed in different ones of the semiconductor devices, are mutually connected to form thermally conductive columns, at least one of the thermally conductive columns extending through all of the semiconductor devices constituting the stacked structure.
8. The stacked structure of claim 7 , wherein the thermally conductive columns are disposed in an inner area, inward of the array of electrically conductive members in each semiconductor device.
9. The stacked structure of claim 8 , wherein the thermally conductive columns form an array aligned with the array of electrically conductive members in each semiconductor device.
10. The stacked structure of claim 7 , wherein in the at least one of the semiconductor devices, the thermally conductive wires conned each of the thermally conductive members to respectively different ones of the electrically conductive members, so that none of the electrically conductive members are connected to more than one of the thermally conductive members.
11. The stacked structure of any of claim 7 , further comprising a plurality of thermal conduction bumps for interconnecting the thermally conductive members in different ones of the semiconductor devices.
12. The stacked structure of claim 7 , wherein at least some of the electrically conductive members, disposed in different ones of the semiconductor devices, are mutually connected to form electrically conductive columns.
13. The stacked structure of claim 12 , further comprising a plurality of electrical interconnection bumps for interconnecting said at least some of the electrically conductive members.
14. The stacked structure of claim 7 , further comprising a heat dissipator having an upper surface and a lower surface, the lower surface being connected to an uppermost one of the semiconductor devices constituting the stacked structure.
15. The stacked structure of claim 14 , wherein the heat dissipator has a plurality of thermally conductive members penetrating from the upper surface to the lower surface and connecting with at least some of the thermally conductive members and/or electrically conductive members in the uppermost one of the semiconductor devices.
16. The stacked structure of claim 14 , wherein the heat dissipator further comprises at least one fin projecting from the upper surface.
17. The stacked structure of claim 7 , further comprising a liquid ceramic coating covering all exposed surfaces of the stacked structure, the liquid ceramic coating promoting heat dissipation.
18. A mounted structure comprising the stacked structure of claim 7 and a mounting substrate, the stacked structure being mounted on the mounting substrate, at least some of the electrically conductive members and/or the thermally conductive members in a lowermost one of the semiconductor devices constituting the stacked structure being connected to a surface of the mounting substrate.
19. A semiconductor device comprising:
a semiconductor substrate having edges, a first major surface, and a second major surface, the first major surface having microelectronic circuits thereon;
a plurality of electrically conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface, disposed in an array around edges of the first major surface and the second major surface;
a plurality of thermally conductive members penetrating through the semiconductor substrate from the first major surface to the second major surface;
trenches in the first major surface between the electrically conductive members and the thermally conductive members,
each of the trenches having an electrode pad at a bottom thereof, with an insulative column on the electrode pad that exposes peripheral portions of the electrode pad; and
a plurality of thermally conductive wires in the trenches, the thermally conductive wires thermally connect the thermally conductive members and the electrically conductive members to the peripheral portions of the electrode pads.
20. The semiconductor device of claim 19 , wherein the thermally conductive wires are electrically conductive between the electrically conductive members and the peripheral portions of the electrode pads, and are not electrically conductive between the thermally conductive members and the peripheral portions of the electrode pads.
21. The semiconductor device of claim 19 , wherein the thermally conductive wires are electrically conductive between the electrically conductive members and the peripheral portions of the electrode pads, and between the thermally conductive members and the peripheral portions of the electrode pads.