Semiconductor chip with a porous single crystal layer and manufacturing method of the same
View Patent ↗A semiconductor chip including a semiconductor substrate provided with a semiconductor device region and a porous single crystal layer, where the semiconductor device region is formed on the main surface portion of the semiconductor substrate, and the porous single crystal layer is formed in an inner region on the backside of the semiconductor substrate, and is comprised of erosion holes extending continuously from the backside of the semiconductor substrate in an inward direction of the semiconductor substrate, oxide films formed on inner surfaces of the erosion holes, and a single crystal portion.
1. A method of manufacturing a semiconductor chip where the method includes steps (1) to (4) and step (3) includes a stain etching method, comprising the steps:
(1) forming semiconductor device regions at respective positions on a main surface of a semiconductor wafer;
(2) grinding the back side of the semiconductor wafer to a predetermined thickness;
(3) providing a porous single crystal layer on the backside of the semiconductor wafer, wherein
the stain etching method is performed by causing a HF/HNO 3 aqueous solution to react with the backside of the semiconductor wafer,
the HF/HNO 3 aqueous solution is a solution of 49% HF aqueous solution mixed with concentrated nitric acid,
and the ratio by volume of the 49% HF aqueous solution to concentrated nitric acid is in the range of 10:1 to 5000:1 with reference to the volume before mixing; and
(4) dicing the processed semiconductor wafer obtained from steps (1) to (3).
2. The method of manufacturing a semiconductor chip according to claim 1 , wherein a polishing step and/or a wet etching step is performed on the backside of the semiconductor wafer before step (3) after step (2) is finished.
3. A semiconductor chip obtained from the method of manufacturing according to claim 1 .
4. A semiconductor device including the semiconductor chip according to claim 3 .
5. The method of manufacturing a semiconductor chip according to claim 1 , wherein
the stain etching method further comprises applying light to the backside of the semiconductor wafer.
6. The method of manufacturing a semiconductor chip according to claim 1 , wherein
the ratio by volume of the 49% HF aqueous solution to concentrated nitric acid is in the range of 100:1 to 1000:1 with reference to the volume before mixing.
7. The method of manufacturing a semiconductor chip according to claim 1 , wherein
surfactant is added to the HF/HNO 3 aqueous solution.
8. The method of manufacturing a semiconductor chip according to claim 1 , wherein
the porous single crystal layer is comprised of erosion holes extending continuously from the backside of the semiconductor wafer in an inward direction of the semiconductor wafer, oxide films formed on inner surface of the erosion holes, and a single crystal portion by the stain etching method.
9. The method of manufacturing a semiconductor chip according to claim 8 , wherein
the porous single crystal layer has a thickness ranging from 0.02 μm to 5 μm as values from the backside of the semiconductor wafer with reference to the direction normal to the surface of the semiconductor wafer, and
an amount of the single crystal portion ranges from 25 to 95 percent by volume relative to the total volume of the erosion holes, the oxide films and the single crystal portion in the porous single crystal layer.
10. The method of manufacturing a semiconductor chip according to claim 8 , wherein
the single crystal portion is comprised of silicon containing boron, and a concentration of the boron is 1×10 15 /cm 3 or more relative to the silicon.
11. The method of manufacturing a semiconductor chip according to claim 8 , wherein
the single crystal portion is comprised of silicon containing boron, and a concentration of the boron is 1×10 18 /cm 3 or more relative to the silicon.
12. The method of manufacturing a semiconductor chip according to claim 1 , wherein
the semiconductor wafer is provided with an epitaxial growth layer containing less than 3×10 18 /cm 3 on the main surface of the semiconductor wafer containing 3×10 18 /cm 3 to 7×10 18 /cm 3 of boron.
13. A method of manufacturing a semiconductor device where the method includes steps (1) to (5) and step (3) includes a stain etching method, comprising:
(1) forming semiconductor device regions at respective positions on a main surface of a semiconductor wafer;
(2) grinding a backside of the semiconductor wafer to a predetermined thickness;
(3) providing a porous single crystal layer on the backside of the semiconductor wafer, wherein
the stain etching method is performed by causing a HF/HNO 3 aqueous solution to react with the backside of the semiconductor wafer,
the HF/HNO 3 aqueous solution is a solution of 49% HF aqueous solution mixed with concentrated nitric acid,
and the ratio by volume of the 49% HF aqueous solution to concentrated nitric acid is in the range of 10:1 to 5000:1 with reference to the volume before mixing;
(4) dicing the processed semiconductor wafer obtained from steps (1) to (3); and
(5) incorporating a semiconductor chip obtained from step (4) into the semiconductor device.