Patent Assignment
Reel/Frame 030049/0831
Assignment of Assignor's Interest
Recorded: 2013-03-20
Pages: 4
Assignor
ELPIDA MEMORY, INC.
Executed: 2013-03-06
Assignee
RAMBUS INC.
1050 ENTERPRISE WAY, SUITE 700, SUNNYVALE, CALIFORNIA, 94089
Covered Properties
(11)
Semiconductor Device Having a Silicon Layer in a Gate Electrode
Method of Manufacturing Semiconductor Device Having Planarized Interlayer Insulating Film
Semiconductor Chip with a Porous Single Crystal Layer and Manufacturing Method of the Same
Method for Controlling Thickness Distribution of a Film
Manufacturing Method for Increasing Product Yield of Memory Devices Suffering from Source/Drain Junction Leakage
Method for Forming a Nitrogen-Containing Gate Insulating Film
Method for Manufacturing a Semiconductor Device Including Interconnections Having a Smaller Width
Calibration Circuit
Method for Manufacturing Semiconductor Device
Semiconductor Device Manufacturing Method and Semiconductor Device
Semiconductor Device Having Silicon Layer in a Gate Electrode
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.