Granted Patent B2

US 7,772,614 · App. 11/377,633 · Granted Aug 10, 2010

Abstract

Claims (37)

1. A method for fabricating a solid electrolyte memory element, comprising:

providing a first electrode;

coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process, wherein the targeted defect formation in the solid electrolyte matrix is effected by ion irradiation, and wherein the ion irradiation is effected with a dose of more than 10 14 /cm 2 ; and

applying a second electrode on the solid electrolyte layer, wherein metal ions are driven into the solid electrolyte layer after the controlled defect formation process to form the targeted defect formation in the solid electrolyte matrix of the solid electrolyte layer.

2. The method of claim 1 , wherein the ion irradiation is effected with a dose of more than 10 15 /cm 2 .

3. The method of claim 1 , wherein one or more active ions selected from boron, arsenic, oxygen and phosphorus are used for the ion irradiation.

4. The method of claim 1 , wherein one or more passive ions selected from nitrogen and noble gases are used for the ion irradiation.

5. The method of claim 1 , wherein the ion irradiation is carried out at energy values of between about 1 keV and about 150 keV.

6. A method for fabricating a solid electrolyte memory element, comprising:

providing a first electrode;

coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process; and

applying a second electrode on the solid electrolyte layer, wherein the targeted defect formation in the solid electrolyte matrix is effected by particle irradiation, the particle irradiation bringing about a vacancy concentration in the solid electrolyte matrix of greater than about 10 −8 .

7. A method for fabricating a solid electrolyte memory element, comprising:

providing a first electrode;

coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process; and

applying a second electrode on the solid electrolyte layer, wherein the targeted defect formation in the solid electrolyte matrix is effected by particle irradiation, the particle irradiation producing a porous microstructure with vacancy agglomerates in the solid electrolyte layer having a diameter of at least 1 nm.

8. A method for fabricating a solid electrolyte memory element, comprising:

providing a first electrode;

coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process, wherein the targeted defect formation in the solid electrolyte matrix is brought about during the coating operation by means of an additional defect formation process;

performing a laser treatment after coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix; and

applying a second electrode on the solid electrolyte layer, wherein metal ions are driven into the solid electrolyte layer after the controlled defect formation process to form the targeted defect formation in the solid electrolyte matrix of the solid electrolyte layer.

9. A method for fabricating a solid electrolyte memory element, comprising:

providing a first electrode;

coating the first electrode with a solid electrolyte layer comprising a solid electrolyte matrix having a targeted defect formation in the solid electrolyte matrix, the targeted defect formation having been intentionally formed by a controlled defect formation process, wherein the targeted defect formation in the solid electrolyte matrix is brought about during the coating operation by means of an additional defect formation process;

performing a laser treatment during the step of coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix; and

applying a second electrode on the solid electrolyte layer, wherein metal ions are driven into the solid electrolyte layer after the controlled defect formation process to form the targeted defect formation in the solid electrolyte matrix of the solid electrolyte layer.

10. The method of claim 1 , further comprising:

driving-in metal ions into the solid electrolyte layer after coating the first electrode with the solid electrolyte layer with targeted defect formation in the solid electrolyte matrix.

11. A solid electrolyte memory element, comprising:

an inert cathode electrode;

a reactive anode electrode; and

a solid electrolyte layer disposed between the inert cathode electrode and the reactive anode electrode, wherein the solid electrolyte layer comprises a solid electrolyte matrix having defect sites intentionally formed by a controlled defect formation process, wherein a vacancy concentration in the solid electrolyte layer is greater than about 10 −8 .

12. The solid electrolyte memory element of claim 11 , wherein the solid electrolyte layer comprises a chalcogenide-containing compound.

13. The solid electrolyte memory element of claim 11 , wherein the solid electrolyte layer comprises an oxide.

14. The solid electrolyte memory element of claim 11 , wherein the reactive anode electrode comprises Cu.

15. The solid electrolyte memory element of claim 11 , wherein the reactive anode electrode comprises Ag.

16. The solid electrolyte memory element of claim 11 , wherein the solid electrolyte layer comprises an at least partly crystalline solid electrolyte matrix with defect sites intentionally formed by the controlled defect formation process.

Assignments (8)