IP Library Granted Patent US 7,179,151
Granted Patent B1
US 7,179,151 · App. 11/390,292 · Granted Feb 20, 2007

Polishing pad, a polishing apparatus, and a process for using the polishing pad

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Quick Facts
Patent No.
US 7,179,151
App. No.
11/390,292
Granted
Feb 20, 2007
Kind
B1
Abstract

A polishing pad can include a first layer and a second layer. The first layer can have a first polishing surface and a first opening. The second layer can have an attaching surface and a second opening substantially contiguous with the first opening. The polishing pad can further include a pad window lying within the first opening. The pad window can include a second polishing surface and a gas-permeable material. In one aspect, an apparatus can include an attaching surface of a platen lying adjacent to the attaching surface of the polishing pad. In another aspect, a process for polishing can include changing a temperature of a gas within a spaced-apart region formed between a pad and a platen. The process can also include forming a gas flux across the polishing pad after polishing has started.

Claims (60)

1. A polishing pad comprising:

a first layer comprising:

a first polishing surface;

a first opposing surface opposite the first polishing surface; and

a first opening extending through the first layer;

a second layer comprising:

an attaching surface;

a second opposing surface opposite the attaching surface, and lying closer to the first opposing surface of the first layer than to the first polishing surface of the first layer; and

a second opening extending through the second layer, the second opening substantially contiguous with the first opening of the first layer; and

a pad window lying within the first opening and comprising:

a second polishing surface substantially contiguous with the first polishing surface; and

a third opposing surface opposite the second polishing surface, wherein the third opposing surface lies in a region between the first polishing surface of the first layer and the attaching surface of the second layer, and the pad window comprises a gas-permeable material.

2. The polishing pad of claim 1 , wherein the pad window comprises a composition that is capable of allowing transmission of a predetermined wavelength or spectrum of radiation.

3. The polishing pad of claim 1 , wherein the first layer and the pad window each comprise a urethane a polyethylene, a polytetrafluoroethylene, a polypropylene, or any combination thereof.

4. The polishing pad of claim 1 , wherein the first opposing surface of the first layer lies adjacent to the second opposing surface of the second layer.

5. The polishing pad of claim 1 , wherein a first perimeter of the first opening has a different length than a second perimeter of the second opening.

6. The polishing pad of claim 1 , wherein:

the first polishing surface of the first layer and the second polishing surface of the pad window lie substantially along a polishing plane; and

a first elevation from the third opposing surface of the pad window to the polishing plane is less than a second elevation from the attaching surface to the polishing plane.

7. The polishing pad of claim 6 , wherein the first elevation is less than a third elevation from the first opposing surface of the first layer to the polishing plane.

8. A polishing apparatus comprising:

a platen comprising a first attaching surface; and

a polishing pad comprising:

a first layer overlying and spaced-apart from the platen, wherein the first layer comprises:

a first polishing surface;

a first opposing surface opposite the first polishing surface; and

a first opening extending through the first layer;

a second layer lying between the first layer and the platen, wherein the second layer comprises:

a second attaching surface lying adjacent to the first attaching surface of the platen;

a second opposing surface opposite the second attaching surface, and lying closer to the first opposing surface of the first layer than to the first polishing surface of the first layer; and

a second opening extending through the second layer, the second opening substantially contiguous with the first opening of the first layer; and

a pad window lying within the first opening of the first layer and comprising:

a second polishing surface substantially contiguous with the first polishing surface of the first layer; and

a third opposing surface opposite the second polishing surface, and the pad window comprises a gas-permeable material.

9. The polishing apparatus of claim 8 , wherein:

the platen further comprises a platen window;

the pad window overlies the platen window; and

the apparatus further comprises a radiation source configured to direct a predetermined wavelength or spectrum of radiation through the second polishing surface of the pad window.

10. The polishing apparatus of claim 9 , wherein each of the platen window and the pad window is capable of allowing transmission of the predetermined wavelength or spectrum of radiation.

11. The polishing apparatus of claim 8 , wherein a spaced-apart region lies between the third opposing surface of the pad window and the platen.

12. The polishing apparatus of claim 11 , wherein the spaced-apart region comprises air, argon, nitrogen, oxygen, carbon dioxide, or any combination thereof.

13. The polishing apparatus of claim 8 , wherein the first opposing surface of the first layer lies immediately adjacent to the second opposing surface of the second layer.

14. The polishing apparatus of claim 8 , wherein the first polishing surface of the first layer and the second polishing surface of the pad window lie along a same plane.

15. The polishing apparatus of claim 14 , wherein the third opposing surface lies farther from the same plane than from a plane along the second attaching surface of the second layer.

16. The polishing apparatus of claim 8 , wherein a composition of the pad window comprises a urethane, a polyethylene, a polytetrafluoroethylene, a polypropylene, or any combination thereof.

17. A process of polishing comprising:

forming a spaced-apart region between a polishing pad and a platen, wherein the spaced-apart region comprises a gas, and the gas has a first averaged temperature;

polishing a workpiece, wherein at a point in time during polishing, the spaced-apart region lies between the platen and the workpiece;

changing a temperature of the gas within the spaced-apart region from the first averaged temperature to a second averaged temperature after polishing the workpiece has started; and

forming a gas flux across the polishing pad after polishing the workpiece has started.

18. The process of claim 17 , further comprising applying a fluid to a polishing surface of the polishing pad wherein the polishing surface overlies the spaced-apart region and the spaced-apart region remains substantially dry.

19. The process of claim 17 , wherein:

the platen further comprises a platen window; and

the pad further comprises a pad window; and

the spaced-apart region lies between the platen window and the pad window.

20. The process of claim 19 , further comprising:

directing a radiation beam at the workpiece such that the radiation beam passes through a polishing surface of the polishing pad;

detecting a predetermined wavelength or spectrum of radiation from the radiation beam;

analyzing the radiation beam after detecting the predetermined wavelength or spectrum of radiation; and

determining whether an endpoint has been reached.

Assignments (21)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2006
From: BOTTEMA, BRIAN E.; ABRAHAM, STEPHEN F.; PAMATAT, ALEX P.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 017732/0744 →