Stacked-type semiconductor device and method of manufacturing the same
A semiconductor device of a stacked type includes a semiconductor chip ( 1 ) that is mounted on a substrate ( 4 ), a first sealing resin ( 12 ) that seals the semiconductor chip ( 1 ), a built-in semiconductor device ( 9 ) that is placed on the first sealing resin ( 12 ), and a second sealing resin ( 13 ) that is formed on the substrate ( 4 ) and seals the semiconductor chip ( 1 ) and the built-in semiconductor device ( 9 ). In this semiconductor device, the semiconductor chip ( 1 ) and the built-in semiconductor device ( 9 ) are electrically connected to the substrate by bonding wires ( 3 ).
1 . A semiconductor device of a stacked type, comprising:
a semiconductor chip that is mounted on a substrate;
a first sealing resin that seals the semiconductor chip;
a built-in semiconductor device that is placed on the first sealing resin; and
a second sealing resin that is formed on the substrate and seals the semiconductor chip and the built-in semiconductor device,
the semiconductor chip and the built-in semiconductor device being electrically connected to the substrate by bonding wires.
2 . The semiconductor device as claimed in claim 1 , wherein the built-in semiconductor device is placed on a top surface of the first sealing resin and has an area equal to or smaller than that of the top surface.
3 . The semiconductor device as claimed in claim 1 , wherein the built-in semiconductor device is a semiconductor chip or a package in which a semiconductor chip is packaged.
4 . The semiconductor device as claimed in claim 1 , wherein the built-in semiconductor device has flat electrodes on a top surface thereof, and wherein the bonding wires are connected to the flat electrodes.
5 . The semiconductor device as claimed in claim 4 , wherein the electrodes have an uppermost layer containing one or more of aluminum, palladium, and tin.
6 . The semiconductor device as claimed in claim 1 , wherein the first sealing resin and the built-in semiconductor device are bonded by a paste or film of an electrically conductive adhesive.
7 . The semiconductor device as claimed in claim 1 , wherein the built-in semiconductor device has a reallocation wiring layer.
8 . A method of fabricating a semiconductor device of a stacked type, comprising the steps of:
electrically connecting pads on a substrate and a semiconductor chip formed thereon by wires;
sealing the semiconductor chip with a first sealing resin;
mounting a built-in semiconductor device on a top surface of the first sealing resin;
electrically connecting pads on the substrate and the built-in semiconductor device by wires; and
sealing, on the substrate, the built-in semiconductor device and the semiconductor chip with a second sealing resin.