Techniques for detecting and correcting errors in a memory device

1. A memory device comprising:

a data storage area of memory cells arranged in a plurality of blocks, wherein a block includes a plurality of words; and

an error detection/correction storage area of memory cells configured to store a) error detection/correction bytes and b) error detection words, wherein an error detection/correction byte is calculated from a corresponding word in the block and wherein a respective bit of the error detection word is calculated from respective bits in the corresponding words in the block.

2. The memory device of claim 1 , wherein the error detection/correction byte is stored in a corresponding word-wise extension of the data storage area.

3. The memory device of claim 2 , wherein the error detection word is stored in a bit-wise extension of the data storage area.

4. The memory device of claim 1 , wherein a respective chunk of the corresponding error detection word is stored in the corresponding word-wise extension of the data storage area.

5. The memory device of claim 1 , further comprising an error detection/correction logic, coupled to the data storage area and the error detection/correction storage area, configured to generate the error detection/correction bytes.

6. The memory device of claim 1 , further comprising an error detection/correction logic, coupled to the data storage area and the error detection/correction storage area, configured to generate the error detection words.

7. The memory device of claim 1 , further comprising an error detection/correction logic, coupled to the data storage area and the error detection/correction storage area, configured to detect and correct a single bit error in a word in the data storage area utilizing a corresponding error detection/correction byte.

8. The memory device of claim 1 , further comprising an error detection/correction logic, coupled to the data storage area and the error detection/correction storage area, configured to detect and correct a double-bit error in a single word in a given block of the data storage area utilizing a corresponding error detection/correction byte of the given block in combination with an error detection word of the given block.

9. The memory device of claim 1 , wherein the error detection/correction byte comprises an error correction code (ECC) byte of a corresponding word in the data storage area.

10. The memory device of claim 1 , wherein the error detection word comprises a parity bit for respective bits in the corresponding words of a block in the data storage area.

11. A method of writing data, the method comprising:

computing, by an error detection/correction logic circuit, an error detection/correction byte for a word in a block;

computing, by the error detection/correction logic circuit, an error detection word wherein a respective bit in the error detection word is calculated from respective bits of the plurality of words in the block;

computing, by the error detection/correction logic circuit, an error detection/correction byte for the error detection word; and

storing the error detection/correction byte for the word in the block, the error detection word, and the error detection/correction byte for the error detection word in a memory device.

12. The method of claim 11 , further comprising storing the word in a data storage area of the memory device.

13. The method of claim 11 , further comprising storing the error detection/correction byte for the word, the error detection word for the plurality of words in a block including the word, and the error detection/correction byte for the error detection word in an extension of the data storage area.

14. The method of claim 13 , wherein the error detection/correction byte of the word is stored in a word-wise portion of the extension of the data storage area corresponding to the word.

15. The method of claim 14 , wherein the error detection word and the error detection/correction byte of the error detection word are stored in a bite-wise portion of the extension of the data storage area.

16. The method of claim 14 , wherein a plurality of chunks of the error detection word and the error detection/correction byte of the error detection word are stored in respective word-wise portions of the extension of the data storage area corresponding to the words in the block.

17. The method of claim 11 , wherein:

the error detection/correction byte for the word is generated by computing an error correction code (ECC) for the word; and

the error detection/correction byte for the error detection word is generated by computing an ECC for the error detection word.

18. The method of claim 17 , wherein the error detection word is generated by computing a parity bit for respective bits in the corresponding words in the block.

19. A method comprising:

reading a) a block of data, b) corresponding error detection/correction bytes and c) a corresponding error detection word, wherein the error detection/correction byte is calculated from a corresponding word in the block of data and wherein a respective bit of the error detection word is calculated from respective bits in the words in the block of data;

detecting, by an error detection/correction logic circuit, errors in a given word of the block of data using a) a given one of the error detection/correction bytes computed from the given word and b) the error detection word;

correcting, by the error detection/correction logic circuit, a single-bit error in the given word using the given one of the error detection/correction bytes, if a single-bit error in the word is detected; and

correcting, by the error detection/correction logic circuit, a double-bit error in the given word using a) the given one of the error detection/correction bytes and b) the error detection word, if a double-bit error in the word is detected.

20. The method of claim 19 , wherein said detecting errors further comprises:

reading the words in the block, the error detection/correction byte for the word in the block, the error detection word for the block and the error detection/correction byte for the error detection word;

checking a word against the corresponding error detection/correction byte; and

checking the error detection word against the corresponding error detection/correction byte.

21. The method of claim 19 , wherein correcting the single-bit error further comprises:

correcting the error in the given word; and

storing the corrected word.

22. The method of claim 19 , wherein correcting the double-bit error further comprises:

re-computing the error detection word from the words in the block after single bit error correction, if necessary;

comparing the re-computed error detection word to the error detection word as read or as corrected by using single-bit error correction, if necessary;

correcting a given word by flipping a corresponding bit for any bit position in which the re-computed error detection word differs from the error detection word as read;

re-computing the error detection/correction byte corresponding to the corrected given word; and

storing the corrected given word and the re-computed error detection/correction byte.

23. The method of claim 22 , further comprising re-computing, by the error detection/correction logic circuit, the error detection word from the words in the block, if the multi-bit error was in the error detection word.

24. The method of claim 19 , wherein:

the error detection/correction byte for the word is generated by computing an error correction code (ECC) for the word; and

the error detection/correction byte for the error detection word is generated by computing an error correction code (ECC) for the error detection word.

25. The method of claim 20 , wherein the error detection word is generated by computing a parity bit for respective bits in the corresponding words in the block.

26. A memory device comprising:

a means for computing an error detection/correction byte for a word in a block;

a means for computing an error detection word from respective bits in the corresponding words in the block;

a means for computing an error detection/correction byte for the error detection word; and

a means for storing the error detection/correction byte for the word in the block, the error detection word, and the error detection/correction byte for the error detection word in a data storage area.

27. The memory device of claim 26 , further comprising:

a means for retrieving the error detection/correction byte for the word in the block, the error detection word, and the error detection/correction byte for the error detection word from the data storage area;

a means for detecting errors in a given word using a given error detection/correction byte corresponding to the given word and the error detection word;

a means for correcting a single-bit error in the given word using the given error detection/correction byte, if a single-bit error in the given word is detected; and

a means for correcting a double-bit error in the given word using the given error detection/correction byte corresponding to the given word and the error detection word, if a double-bit error in the given word is detected.

28. The memory device of claim 27 , wherein:

the error detection/correction byte for the word comprises an error correction code (ECC);

the bits of the error detection word comprises a parity bit; and

the error detection/correction byte for the error detection word comprises an ECC.