Ion implantation of spin on glass materials
View Patent ↗A spin on glass SOG layer 30 is formed, then a PECVD barrier layer 40 over the SOG layer. Holes 50 in the SOG layer for vias are formed with a wine glass profile, so that in a peripheral region around the periphery of the holes, the barrier layer is thinner or absent, and ion implantation is performed substantially perpendicular to the layers, to reach the SOG layer through the barrier layer preferentially in the peripheral region. This enables the implantation to be concentrated on the peripheral region, without the need for implantation at a high angle and wafer rotation. This enables the manufacturing process to be simplified and hence costs reduced. By concentrating the implantation in the peripheral region where it can reduce moisture transfer to material in the holes, there is less risk of deplanarization due to the SOG shrinkage associated with ion implantation.
1. A method of manufacturing parts of an electronic device, comprising the steps of forming a spin on glass SOG layer, forming a barrier layer over the SOG layer, forming holes or patterns in the SOG layer, so that in a peripheral region around the periphery of the holes or patterns, the barrier layer is thinner or absent, compared to other regions away from the peripheral region, and performing ion implantation substantially perpendicular to the layers, to reach the SOG layer through the barrier layer preferentially in the peripheral region.
2. The method of claim 1 , wherein the step of forming a barrier layer forms a single barrier layer made of one material.
3. The method of claim 1 , wherein the step of forming holes or patterns generates a wine glass shape.
4. The method of claim 1 , wherein the step of forming holes or patterns includes the steps of forming a patterned etch resist layer, followed by the isotropic etching and anisotropic etching.
5. The method of claim 1 , the barrier layer comprising a CVD oxide layer.
6. The method of claim 1 , the other regions of the barrier layer having a thickness greater than 4000 Å, and the peripheral region having a thickness less than 1500 Å.
7. The method of claim 1 , the ion implantation being applied in sufficient dosage and energy to cause structural changes within the spin-on-glass layer to cause the spin-on-glass layer in the peripheral region to be not susceptible to moisture sorption and outgassing.
8. The method of claim 7 , wherein a lateral extension of the structural changes within the spin-on glass layer by applying a dosage and energy is at least 500 Å, or more than 1000 Å.
9. The method of claim 7 , wherein a lateral extension of the structural changes within the spin-on-glass layer by applying a dosage and energy more than 1000 Å.
10. The method of claim 1 , the ion implantation comprising any of the group consisting of Ar, B, F, P, N, 0, As, and Si.
11. The method of claim 1 , including the preliminary step of forming a bottom conductive layer and a lower barrier layer before forming the SOG layer.
12. The method of claim 1 , including a step of forming a top conductive layer in the holes or patterns.
13. The method of claim 1 , wherein the implantation is across the complete thickness of the SOG layer.
14. An integrated circuit structure, comprising a spin on glass (SOG) layer, a barrier layer over the SOG layer, holes or patterns in the SOG layer, said holes or patterns formed so that in a peripheral region around the periphery of the holes or patterns, the barrier layer is thinner or absent, compared to other regions away from the peripheral region, the SOG layer having ions implanted, the other regions of the barrier layer having a thickness greater than 4000 Å and the peripheral region having a thickness less than 1500 Å and wherein a lateral extension of the structural changes within the spin-off-glass layer is at least 500 Å.
15. The circuit structure of claim 14 , the barrier layer comprising a CVD oxide layer.
16. The circuit structure of claim 14 , comprising a bottom conductive layer and a lower barrier layer below the SOG layer.
17. The circuit structure of claim 14 , including a top conductive layer in the holes or patterns.
18. The circuit structure of claim 14 , the holes or patterns having a profile in the shape of a wine glass.
19. The circuit structure of claim 14 , the SOG layer having ions implanted being such as to cause structural changes within the spin-on-glass layer to cause the spin-on-glass layer in the peripheral region to be not susceptible to moisture sorption and outgassing.
20. The circuit structure of claim 14 , wherein a lateral extension of the structural changes within the spin-on-glass layer is more than 1000 Å.