Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device with an elevated source/drain structure provided in each predetermined position defined by the oxide film and gate wiring on a semiconductor silicon substrate, where an orthographic projection image of a shape of an upper end portion of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is substantially in agreement with a predetermined shape defined by the corresponding oxide film and gate wiring on the semiconductor silicon substrate, and at least one of orthographic projection images of cross-sections taken along planes parallel with the semiconductor silicon substrate of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is larger than the predetermined shape defined by the corresponding oxide film and gate wiring on the semiconductor silicon substrate.
1. A method of manufacturing a semiconductor device, comprising the steps of:
(1) providing an impurity diffusion structure and an element isolation region in a semiconductor silicon substrate;
(2) providing gate wiring on the semiconductor silicon substrate; and
(3) growing a semiconductor crystal to protrude in contact with a side wall of the gate wiring on the semiconductor silicon substrate by a selective epitaxial growth method, so that said semiconductor crystal is wider at a center portion than at both top and bottom portions,
wherein the step of growing the semiconductor crystal to protrude is performed on at least one condition selected from the group consisting of temperature conditions with two or more levels and pressure conditions with two or more levels, and
wherein at least one condition selected from the group consisting of temperature conditions with two or more levels and pressure conditions with two or more levels is at least one selected from the group consisting of following (a) to (c):
(a) under a pressure with a constant value in the range of 1 to 100 Torr, a first temperature condition ranges from 830 to 900° C., and a second temperature condition ranges from 780 to 820° C.;
(b) under a temperature with a constant value in the range of 780 to 900° C., a first pressure condition ranges from 1 to 10 Torr, and a second pressure condition ranges from 20 to 100 Torr; and
(c) first conditions of temperature and pressure are respectively in the range of 830 to 900° C. and in the range of 1 to 10 Torr, and second conditions of temperature and pressure are respectively in the range of 780 to 820° C. and in the range of 20 to 100 Torr.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein a gas for use in the selective epitaxial growth method is a mixed gas of SiH 2 Cl 2 and HCl.
3. A method of manufacturing a semiconductor device, comprising the steps of:
(1) providing an impurity diffusion structure and an element isolation region in a semiconductor silicon substrate;
(2) providing gate wiring on the semiconductor silicon substrate; and
(3) growing a semiconductor crystal to protrude in contact with a side wall of the gate wiring on the semiconductor silicon substrate by a selective epitaxial growth method,
wherein the step of growing the semiconductor crystal to protrude is performed under a temperature with a constant value in the range of 780 to 900° C. and a first pressure condition ranging from 1 to 10 Torr for a first time period, and then increasing to a second pressure condition ranging from 20 to 100 Torr for a second time period different than said first time period.
4. The method of manufacturing a semiconductor device according to claim 3 , wherein a gas for use in the selective epitaxial growth method is a mixed gas of SiH 2 Cl 2 and HCl.
5. A method of manufacturing a semiconductor device, comprising the steps of:
(1) providing an impurity diffusion structure and an element isolation region in a semiconductor silicon substrate;
(2) providing gate wiring on the semiconductor silicon substrate; and
(3) growing a semiconductor crystal to protrude in contact with a side wall of the gate wiring on the semiconductor silicon substrate by a selective epitaxial growth method,
wherein the step of growing the semiconductor crystal to protrude is performed under first conditions of temperature and pressure that are respectively in the range of 830 to 900° C. and in the range of 1 to 10 Torr for a first time period, and second conditions of temperature and pressure that are respectively in the range of 780 to 820° C. and in the range of 20 to 100 Torr for a second time period different from said first time period.
6. The method of manufacturing a semiconductor device according to claim 5 , wherein a gas for use in the selective epitaxial growth method is a mixed gas of SiH 2 Cl 2 and HCl.