Semiconductor device and programming method therefor
A semiconductor device is provided which includes a pair of metal interconnections (B, C) provided above a semiconductor substrate ( 10 ), a program layer ( 20 ) provided over the pair of metal interconnections (B, C) and in which an opening ( 21 ) may be selectively formed in the program layer ( 20 ) on the basis of programming information, and a read circuit ( 40 ) reading the programming information by determining whether such an opening ( 21 ) is formed in the program layer ( 20 ) by utilizing an electrostatic capacitance between the pair of metal interconnections (B, C). The program layer ( 20 ) may be made of a material having a dielectric constant higher than that of air or the program layer ( 20 ) may be made of a conductor or a material having a dielectric constant lower than that of air. Thus, trimming information or information on a device identification (ID) can be stored, even if the semiconductor device is a logic device that does not have a memory transistor, by detecting the information that is determined by the electrostatic capacitance that varies depending on whether or not there is provided an opening ( 21 ).
1. A semiconductor device comprising:
a pair of metal interconnections provided above a semiconductor substrate;
a programming material provided over the pair of metal interconnections, wherein an opening is selectively formed in the programming material in accordance with programming information; and
a read circuit coupled to the pair of metal interconnections for reading the programming information by determining whether an opening has been formed in the programming material in response to an electrostatic capacitance between the pair of metal interconnections.
2. The semiconductor device as claimed in claim 1 , further comprising a pair of reference metal interconnections formed below the programming material in the semiconductor device, wherein the read circuit is also coupled to the pair of reference metal interconnections and determines whether an opening is formed in the programming material based on the electrostatic capacitance that is present between the pair of metal interconnections and an electrostatic capacitance that is present between the pair of reference metal interconnections.
3. The semiconductor device as claimed in claim 2 , wherein the pair of metal interconnections and the pair of reference metal interconnections include a shared metal interconnection portion.
4. The semiconductor device as claimed in claim 1 , wherein the programming material comprises a material having a dielectric constant higher than that of air.
5. The semiconductor device as claimed in claim 1 , wherein the programming material comprises either a conductor or a material having a dielectric constant lower than that of air.
6. The semiconductor device as claimed in claim 1 , wherein said semiconductor device is a part of a memory cell of a memory cell array including non-volatile memory cells arranged in rows and columns.