Method for forming Schottky diodes and ohmic contacts in the same integrated circuit
View Patent ↗A method for forming an ohmic contact and a Schottky diode in an integrated circuit includes providing a semiconductor substrate; forming first and second diffusion regions in the semiconductor substrate; forming an insulating layer on the semiconductor substrate; forming a first contact opening in the insulating layer and over the first diffusion region to expose the semiconductor substrate; forming a barrier metal layer on the insulating layer and in the first contact opening; forming a second contact opening in the barrier metal layer and the insulating layer to expose the semiconductor substrate where the second contact opening is formed over the second diffusion region; forming a metal layer on the barrier metal layer and the insulating layer and in the first and second contact openings where the metal layer includes a metal that forms a Schottky barrier junction with the semiconductor substrate; and patterning the metal layer to form the ohmic contact over the first diffusion region and the Schottky diode over the second diffusion region.
1. A method for forming an ohmic contact and a Schottky diode in an integrated circuit, comprising:
providing a semiconductor substrate;
forming first and second diffusion regions in the semiconductor substrate;
forming an insulating layer on the semiconductor substrate;
forming a first contact opening in the insulating layer to expose the semiconductor substrate, the first contact opening being formed over the first diffusion region;
forming a barrier metal layer on the insulating layer and in the first contact opening;
forming a second contact opening in the barrier metal layer and the insulating layer to expose the semiconductor substrate, the second contact opening being formed over the second diffusion region;
forming a metal layer of a first type on the barrier metal layer and the insulating layer and in the first and second contact openings, the metal layer comprising a metal that forms a Schottky barrier junction with the semiconductor substrate; and
patterning the metal layer to form the ohmic contact over the first diffusion region and the Schottky diode over the second diffusion region.
2. The method of claim 1 , wherein the metal layer of the first type comprises an aluminum layer.
3. The method of claim 1 , wherein the baffler metal layer comprises a titanium (Ti) layer and a titanium nitride (TiN) layer formed on the titanium layer.
4. The method of claim 3 , wherein the ohmic contact comprises a metal plug contact and wherein after forming the baffler metal layer and before forming the second contact opening, the method further comprises:
forming a metal layer of a second type, different than the first type, on the barrier metal layer and in the first contact opening; and
removing the metal layer of the second type and the baffler metal layer on the insulating layer, leaving the metal layer of the second type and the barrier metal layer in the first contact opening to form the metal plug contact in the first contact opening,
wherein forming the second contact opening comprises forming the second contact opening in the insulating layer.
5. The method of claim 4 , wherein after removing the metal layer of the second type and the barrier metal layer on the insulating layer to form the metal plug contact in the first contact opening, the method further comprises:
forming a second baffler metal layer on the insulating layer and the metal plug contact,
wherein forming the second contact opening comprises forming the second contact opening in the second barrier metal layer and the insulating layer.
6. The method of claim 5 , wherein the second barrier metal layer comprises a titanium-tungsten (TiW) layer.
7. The method of claim 4 , wherein the metal layer of the first type comprises an aluminum layer and the metal layer of the second type comprises a tungsten layer or a copper layer.
8. The method of claim 2 , wherein the ohmic contact comprises a metal plug contact and wherein after forming the baffler metal layer and before forming the second contact opening, the method further comprises:
forming a metal layer of a second type, different than the first type, on the barrier metal layer and in the first contact opening;
removing the metal layer except in the first contact opening to form the metal plug contact in the first contact opening;
forming a second barrier metal layer on the barrier metal layer and the metal plug contact,
wherein forming the second contact opening comprises forming the second contact opening in the second baffler metal layer, the baffler metal layer and the insulating layer.
9. The method of claim 8 , wherein the baffler metal layer comprises a titanium (Ti) layer and a titanium nitride (TiN) layer formed on the titanium layer and the second baffler metal layer comprises a titanium (Ti) layer.
10. The method of claim 8 , wherein the metal layer of the first type comprises an aluminum layer and the metal layer of the second type comprises a tungsten layer or a copper layer.
11. The method of claim 1 , wherein the second diffusion region comprises a lightly doped N− diffusion region.
12. The method of claim 1 , wherein the first diffusion region comprises a heavily doped N+ diffusion region.
13. The method of claim 1 , wherein the first diffusion region comprises a heavily doped P+ diffusion region.