Methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing same
View Patent ↗The present invention is directed to methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing same. In one illustrative embodiment, the method includes forming a plurality of test structures on a semiconducting substrate, each of the test structures having at least one physical dimension that varies relative to the other of the plurality of test structures, at least some of the test structures exhibiting at least some degree of manufacturing-induced corner rounding, forming at least one reference test structure, performing at least one electrical test on the plurality of test structures and on the reference test structure to thereby produce electrical test results, and analyzing the test results to determine an impact of the manufacturing-induced corner rounding on the performance of the plurality of test structures.
1. A method, comprising:
forming a plurality of test structures on a semiconducting substrate, each of said test structures having a first member and a second member at least partially overlapping the first member, wherein at least one physical dimension of each test structure associated with the overlapping varies relative to the other of said plurality of test structures to affect the proximity of one of the first and second members in the particular one of the plurality of test structures to a region of manufacturing-induced corner rounding present at an inside corner defined in the other of the first and second members in the particular one of the test structures;
forming at least one reference test structure;
performing at least one electrical test on said plurality of test structures and on said at least one reference test structure to thereby produce electrical test results; and
analyzing said test results to determine an impact of said manufacturing-induced corner rounding on the performance of said plurality of test structures.
2. The method of claim 1 , wherein said plurality of test structures and said at least one reference test structure are formed on the same substrate.
3. The method of claim 1 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on a gate electrode structure.
4. The method of claim 1 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on an active area.
5. The method of claim 1 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on a gate electrode structure and an active area.
6. The method of claim 1 , wherein said plurality of test structures and said at least one reference test structure are formed on the same semiconducting substrate.
7. A method, comprising:
forming a plurality of test structures on a semiconducting substrate, each of said test structures having a first member and a second member at least partially overlapping the first member, wherein at least one physical dimension of each test structure associated with the overlapping varies relative to the other of said plurality of test structures to affect the proximity of one of the first and second members in the particular one of the plurality of test structures to a region of manufacturing-induced corner rounding present at an inside corner defined in the other of the first and second members in the particular one of the plurality of test structures;
forming a plurality of reference test structures;
performing at least one electrical test on said plurality of test structures and on said plurality of reference test structures to thereby produce electrical test results; and
analyzing said test results to determine an impact of said manufacturing-induced corner rounding on the performance of said plurality of test structures.
8. The method of claim 7 , wherein said plurality of test structures and said plurality of reference test structures are formed on the same substrate.
9. The method of claim 7 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on a gate electrode structure.
10. The method of claim 7 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on an active area.
11. The method of claim 7 , wherein said plurality of test structures comprise a plurality of test structures for testing said impact of said manufacturing-induced corner rounding on a gate electrode structure and an active area.
12. The method of claim 7 , wherein said plurality of test structures and said plurality of reference test structures are formed on the same semiconducting substrate.
13. A method, comprising:
forming a plurality of gate electrode test structures on a semiconducting substrate for testing an impact of corner rounding resulting from manufacturing operations, each of said gate electrode test structures having at least one physical dimension that varies relative to the other of said plurality of gate electrode test structures, at least some of said gate electrode test structures exhibiting manufacturing-induced corner rounding at a first inside corner defined in said gate electrode test structures;
forming a plurality of active area test structures on a semiconducting substrate for testing an impact of corner rounding resulting from manufacturing operations, each of said active area test structures having at least one physical dimension that varies relative to the other of said plurality of active area test structures, at least some of said active area test structures exhibiting manufacturing-induced corner rounding at a second inside corner defined in said active area test structures, wherein the physical dimensions of the gate electrode test structures and the active area test structures are varied to affect the spacing between the gate electrode structures and the active area structures relative to one of the first and second inside corners;
forming at least one reference test structure;
performing at least one electrical test on said plurality of gate electrode test structures, said plurality of active area test structures, and on said at least one reference test structure to thereby produce electrical test results;
analyzing said test results to determine an impact of said manufacturing-induced corner rounding on the performance of said plurality of gate electrode test structures; and
analyzing said test results to determine an impact of said manufacturing-induced corner rounding on the performance of said plurality of active area test structures.
14. The method of claim 13 , wherein said plurality of gate electrode test structures, said plurality of active area test structures, and said at least one reference test structure are formed on the same substrate.
15. The method of claim 13 , wherein forming said at least one reference test structure comprises forming a plurality of reference test structures.
16. The method of claim 13 , wherein forming said at least one reference test structure comprises forming a plurality of reference test structures on the same semiconducting substrate.