Solution-based deposition process for metal chalcogenides

1. A method of preparing a solution of a hydrazonium precursor of a metal chalcogenide which comprises adding an elemental metal and an elemental chalcogen to a hydrazine compound.

2. The method of claim 1 wherein the concentration of the metal chalcogenide precursor in the hydrazine compound is no more than about 10 molar.

3. The method of claim 1 wherein the concentration of the metal chalcogenide precursor in the hydrazine compound is about 0.01 molar to about 10 molar.

4. The method of claim 1 concentration of the metal chalcogenide precursor in the hydrazine or about 0.05 to about 1 molar.

5. The method of claim 1 wherein the hydrazine compound is represented by the formula;

R 1 R 2 N—NR 3 R 4

wherein each of R 1, R 2 ,R 3 and R 4 is independently hydrogen, aryl, a linear or branched alkyl having 1-6 carbon atoms or a cyclic alkyl of 3-6 carbon atoms.

6. The method of claim 1 wherein the hydrazine compound comprises hydrazine.

7. The method of claim 1 which comprises reacting vapors of the hydrazine compound with the elemental metal.

8. The method of claim 1 wherein said metal chalcogenide comprises KSb 5 S 8 .

9. The method of claim 1 wherein said metal chalcogenide comprises SnS 2 .

10. The method of claim 1 wherein said metal chalcogenide comprises Ga 2 Se 3 .

11. The method of claim 1 wherein said hydrazine compound is substantially anhydrous.

12. A method of depositing a film of a metal chalcogenide which comprises preparing a solution of a hydrazinuim precursor of a metal chalcogenide which comprises adding an elemental metal and an elemental chalcogen to a hydrazine compound to provide a solution of said precursor of the metal chalcogenide;

applying a solution of said precursor onto a substrate to produce a film of said precursor; and annealing the film of the precursor to produce the metal chalcogenide film on the substrate.

13. The method of claim 12 wherein the annealing is carried out at temperatures of about 50 to about 500°C.

14. The method of claim 12 wherein the annealing is carried out at temperatures of about 100 to about 350°C.

15. The method of claim 12 wherein the concentration of the metal chalcogenide precursor in the hydrazine compound is no more than about 10 molar.

16. The method of claim 12 wherein the hydrazine compound is represented by the formula;

R 1 R 2 N—NR 3 R 4

wherein each of R 1, R 2 ,R 3 and R 4 is independently hydrogen, aryl, hydrogen,aryl,a linear or branched alkyl having 1-6 carbon atoms or a cyclic alkyl of 3-6 carbon atoms.

17. The method of claim 12 wherein the hydrazine compound comprises hydrazine.

18. A film prepared by the method of claim 12 .

19. A method of preparing an improved field-effect transistor of the type having a source region and a drain region, a channel layer extending between the source region and the drain region, the channel layer including a semiconducting material, a gate region, disposed in spaced adjacency to the channel layer, an electrically insulating layer between the gate region and the source region, drain region and channel layer, wherein the method comprises:

preparing a channel layer comprising a film of a metal chalcogenide semiconducting material which comprises preparing a solution of a precursor of a metal chalcogenide by adding an elemental metal and an elemental chalcogen to a hydrazine compound to provide a solution of said precursor of the metal chalcogenide;

applying a solution of said precursor onto a substrate to produce a film of said precursor; and annealing the film of the precursor to produce the metal chalcogenide film on said substrate.

20. The method of claim 19 wherein the annealing is carried out at a temperature of about 50 to about 500°C.