Capacitive substrate
View Patent ↗A capacitive substrate and method of making same in which first and second glass layers are used. A first conductor is formed on a first of the glass layers and a capacitive dielectric material is positioned over the conductor. The second conductor is then positioned on the capacitive dielectric and the second glass layer positioned over the second conductor. Conductive thru-holes are formed to couple to the first and second conductors, respectively, such that the conductors and capacitive dielectric material form a capacitor when the capacitive substrate is in operation.
1. A capacitive substrate comprising:
a first unlaminated, pure glass layer having a first surface and a second surface;
a first conductor directly bonded on said first surface of said first glass layer;
a capacitive dielectric layer on said first surface of said first glass layer and substantially over said first conductor, said capacitive dielectric layer being heat treated at a temperature within the range of from about 400 degrees C. to about 800 degrees C., and laser annealed to fabricate capacitive substrates with a tunable property;
a second conductor on said first capacitive dielectric layer;
a second glass layer on said first capacitive dielectric layer and directly bonded substantially over said second conductor, said second glass layer having a first surface, said bonding of said second glass layer on said capacitive dielectric layer being performed by the heat treating thereof at a temperature within the range of from about 400 degrees C. to about 1000 degrees C.;
a first thru-hole electrical connection to said first conductor; and
a second thru-hole electrical connection to said second conductor, said first and second conductors and said capacitive dielectric layer forming a capacitor when said capacitive substrate is in operation.
2. The capacitive substrate of claim 1 wherein the material of said first and second conductors is selected from the group consisting of gold, aluminum, chrome, titanium, platinum, copper, nickel and alloys thereof, and tin oxide, indium tin oxide and doped tin oxide.
3. The capacitive substrate of claim 1 wherein the material of said capacitive dielectric layer is selected from the group consisting of barium titanate, substituted barium titanate, strontium titanate, lead titanate, lead zirconate titanate, substituted lead zirconate titanate, lead magnesium niobate, lead zinc niobate, lead iron niobate, solid solutions of lead magnesium niobate and lead titanate, solid solutions of lead zinc niobate and lead titanate, zinc oxide, titanium dioxide, lead iron tantalite, other ferroelectric tantalates, and combinations or mixtures thereof.
4. The capacitive substrate of claim 1 wherein each of said first and second thru-hole connections comprises copper.
5. The capacitive substrate of claim 1 further including a conductive member on said first surface of said first glass layer adjacent said first conductor.
6. The capacitive substrate of claim 1 further including third and fourth thru-hole electrical connections to said conductive member.
7. The capacitive substrate of claim 6 further including a first electrically conductive layer on said second surface of said first glass layer electrically coupled to said first and third thru-hole electrical connections and a second electrically conductive layer on said first surface of said second glass layer electrically coupled to said second and fourth thru-hole electrical connections.
8. The capacitive substrate of claim 1 further including a first electrically conductive layer on said second surface of said first glass layer electrically coupled to said first thru-hole electrical connection and a second electrically conductive layer on said first surface of said second glass layer electrically coupled to said second thru-hole electrical connection.
9. The capacitive substrate of claim 8 further including additional dielectric layers and conductive layers on opposing sides of said first and second glass layers in an alternating orientation.
10. The capacitive substrate of claim 1 further including additional dielectric layers and conductive layers on opposing sides of said first and second glass layers in an alternating orientation and at least one electronic component positioned on said capacitive substrate and electrically coupled to selected ones of said conductive layers and/or said capacitor.
11. The capacitive substrate of claim 1 wherein said laser annealing is performed at various fluences from one to 300 pulses per area to create various capacitances per area.