Semiconductor device and method for fabricating the same
A semiconductor device includes a bit line formed in a semiconductor substrate, a first interconnection line provided above the bit line and connected to the bit line, and a second interconnection line provided above the first interconnection line and connected to the first interconnection line and a transistor in a peripheral region. The first interconnection line is connected to the transistor through the second interconnection line only.
1 . A semiconductor device comprising:
a bit line formed in a semiconductor substrate;
a first interconnection line provided above the bit line and connected to the bit line; and
a second interconnection line provided above the first interconnection line and connected to the first interconnection line and a transistor in a peripheral region,
wherein the first interconnection line is connected to the transistor through the second interconnection line only.
2 . The semiconductor device as claimed in claim 1 wherein the first interconnection line is formed in the core region or a region between the core region and the peripheral region only.
3 . The semiconductor device as claimed in claim 1 , further comprising a third interconnection line connected to the second interconnection line and the transistor,
wherein the second interconnection line is connected to the transistor through the third interconnection line only.
4 . The semiconductor device as claimed in claim 1 , further comprising an ONO film provided on the bit line and having a contact hole through which the bit line and the transistor are connected.
5 . A semiconductor device comprising:
a bit line formed in a semiconductor substrate;
an interlayer insulating film provided above the bit line; and
a first interconnection layer provided on the interlayer insulating film and connected to the bit line through a contact hole formed in the interlayer insulating film,
wherein the interlayer insulating film has a dummy contact hole connected to the first interconnection line and the semiconductor substrate, the dummy contact hole being connected to a portion of the first interconnection line between a transistor in a peripheral region and the bit line.
6 . The semiconductor device as claimed in claim 5 , wherein the dummy contact hole is formed in a core region or a region between the core region and the peripheral region.
7 . The semiconductor device as claimed in claim 6 , wherein the dummy contact hole is connected to a dummy diffused region formed in the semiconductor substrate.
8 . The semiconductor device as claimed in claim 1 , further comprising;
an ONO film provided between the bit line and the interlayer insulating film,
wherein the contact hole is formed in the ONO film.
9 . The semiconductor device as claimed in claim 1 , wherein the peripheral region is a select cell area.
10 . A method of fabricating a semiconductor device comprising:
forming a bit line in a semiconductor substrate;
forming a first interconnection line, above the bit line, connected to the bit line; and
forming a second interconnection line, above the first interconnection line, connected to the first interconnection line and a transistor in a peripheral region,
wherein the first interconnection line is connected to the transistor through the second interconnection line only.
11 . The method as claimed in claim 10 , wherein the step of forming the first interconnection line further comprises a step of forming a third interconnection line connected to the transistor and to be connected the second interconnection line.
12 . The method as claimed in claim 10 , further comprising forming an ONO film on the semiconductor substrate,
the first interconnection line being connected to the bit line through the contact hole formed in the ONO film.
13 . A method of fabricating a semiconductor device comprising:
forming a bit line on a semiconductor substrate;
forming an interlayer insulating film above the bit line;
forming a contact hole, in the interlayer insulating film, connected to the bit line; and
forming a first interconnection line, on the interlayer insulating film, connected to a transistor in a peripheral region and the bit line,
wherein the step of forming the contact hole includes a step of forming a dummy contact hole connected to the semiconductor substrate and for connection to the first interconnection line between the transistor and the bit line.
14 . The method as claimed in claim 13 , wherein the step of forming the bit line includes a step of forming a dummy diffused region in the semiconductor substrate for connection to the dummy contact hole.
15 . The method as claimed in claim 13 , further comprising forming an ONO film on the semiconductor substrate,
wherein the step of forming the contact hole includes a step of forming the contact hole in the ONO film.
16 . The method as claimed in claim 10 , wherein the peripheral region is a core select cell area.