Semiconductor device and programming method therefor
View Patent ↗There is provided a semiconductor device including regular cells ( 16 ) disposed in a regular sector ( 10 ) and connected to a word line ( 14 ), and a plurality of reference cells ( 26 ) used in reading data from the regular cells ( 10 ), wherein one of the reference cells is selected based on a word line distance associated with a regular cell ( 16 ) from which data is read. In accordance with the present invention, it is possible to reduce the difference in delay times in the outputs to the sensing amplifier ( 30 ) from the regular cell ( 16 ) and the reference cell ( 26 ), by selecting one of a plurality of reference cells ( 26 ) in response to the word line distance of the regular cell from which data is read. It is therefore possible to provide a semiconductor device in which the chip area can be reduced and the sensing operation can be accelerated.
1. A semiconductor device comprising:
regular cells disposed in a regular sector and connected to a word line;
a plurality of reference cells used in reading data from the regular cells;
a reference word line connected to the plurality of reference cells; and
a dummy word line located along the reference word line,
wherein one of the reference cells is selected in response to a word line distance associated with a regular cell from which data is read.
2. The semiconductor device as claimed in claim 1 , wherein each of the plurality of reference cells has a different reference word line distance from each other.
3. A semiconductor device comprising:
regular cells disposed in a regular sector and connected to a word line;
sub-sectors of the regular cells;
a plurality of reference cells used in reading data from the regular cells,
wherein one of the reference cells is selected in response to a word line distance associated with a regular cell from which data is read,
the semiconductor device further comprising sensing amplifiers connected to the regular cells from which data is read and ones of the plurality of reference cells selected, the sensing amplifiers connected to the regular cells in each of the sub-sectors connected to the same reference cell.
4. The semiconductor device as claimed in claim 3 , further comprising a selecting circuit selecting the reference cell in response to the word line distance and connected to the sensing amplifier.
5. The semiconductor device as claimed in claim 3 , further comprising:
a reference word driver driving the reference word line; and
a word driver driving the word line,
wherein the reference word driver is adjacent to the word driver.
6. A semiconductor device comprising:
regular cells disposed in a regular sector and connected to a word line, wherein the regular cells are multi-bit cells;
a plurality of reference cells used in reading data from the regular cells; and
a reference word line connected to the reference cells,
wherein each of the reference cells has a different reference word line distance from each other and each of the reference cells has a plurality of sub-reference cells, and wherein one of the reference cells is selected in response to a word line distance associated with a regular cell from which data is read.
7. The semiconductor device as claimed in claim 6 , wherein the sub-reference cells associated with an identical reference cell are connected to an identical reference word line.
8. The semiconductor device as claimed in claim 6 , wherein each of the sub-reference cells is connected to a different reference word line.
9. The semiconductor device as claimed in claim 1 , wherein the regular cells are flash memory cells.
10. The semiconductor device as claimed in claim 1 , wherein the dummy word line is connected to a constant voltage source.
11. The semiconductor device as claimed in claim 1 , wherein spacing between the reference word line and the dummy word line is substantially equal to that between adjacent word lines in the regular sector.
12. The semiconductor device as claimed in claim 1 further comprising:
sub-sectors of the regular cells; and
sensing amplifiers connected to the regular cells from which data is read and ones of the plurality of reference cells selected, the sensing amplifiers connected to the regular cells in each of the sub-sectors connected to the same reference cell.
13. The semiconductor device as claimed in claim 12 , further comprising a selecting circuit selecting the reference cell in response to the word line distance and connected to the sensing amplifier.
14. The semiconductor device as claimed in claim 12 , further comprising:
a reference word driver driving the reference word line; and
a word driver driving the word line,
wherein the reference word driver is adjacent to the word driver.
15. The semiconductor device as claimed in claim 3 , wherein the regular cells are flash memory cells.
16. The semiconductor device as claimed in claim 6 , wherein the regular cells are flash memory cells.
17. The semiconductor device as claimed in claim 6 , further comprising:
sub-sectors of the regular cells; and
sensing amplifiers connected to the regular cells from which data is read and ones of the plurality of reference cells selected, the sensing amplifiers connected to the regular cells in each of the sub-sectors connected to the same reference cell.
18. The semiconductor device as claimed in claim 17 , further comprising a selecting circuit selecting the reference cell in response to the word line distance and connected to the sensing amplifier.
19. The semiconductor device as claimed in claim 17 , further comprising:
a reference word driver driving the reference word line; and
a word driver driving the word line,
wherein the reference word driver is adjacent to the word driver.