Granted Patent B2

US 7,446,017 · App. 11/444,091 · Granted Nov 4, 2008

Abstract

Claims (13)

1. A method for forming a stacked die semiconductor structure, the method comprising:

providing a first semiconductor substrate having a first device formed therein;

providing a second semiconductor substrate having a second device formed therein, the second semiconductor substrate having a first set of vias extending therethrough to a metallic bonding layer;

forming an interconnect on the first semiconductor substrate;

forming a dielectric layer on the first semiconductor substrate;

forming a second set of vias through the dielectric layer such that it contacts the interconnect and extends through the dielectric layer;

forming a patterned ground shield on the dielectric layer such that it contacts the second set of vias; and

directly bonding the bonding layer to the patterned ground shield.

2. The method of claim 1 , wherein forming the patterned ground shield includes forming a metallic conductor.

3. The method of claim 1 , wherein forming the patterned ground shield includes depositing a layer of aluminum having a thickness of between 0.5 microns and 3.0 microns.

4. The method of claim 1 , wherein the bonding layer has a pattern substantially conforming to a pattern defined by the first set of vias.

5. The method of claim 4 , wherein the second set of vias has a pattern substantially conforming to the pattern defined by the first set of vias.

6. The method of claim 4 , wherein the bonding layer includes metallic regions having an area substantially the same as the area of the first set of vias extending through the first semiconductor substrate.

Assignments (23)