Connecting structure, printed substrate, circuit, circuit package and method of forming connecting structure

1. A connecting structure between a circuit and another electronic component, comprising:

a first electrode provided on said circuit;

a second electrode provided on said electronic component, said second electrode comprising an input/output end of said electronic component;

wherein said first electrode is located at a substantially overlapped position with respect to said second electrode, so that said circuit and said electronic component are electrically connected with each other without an intervening wiring therebetween; and

a dielectric material interposed between and directly connected to said first and second electrodes.

2. The connecting structure according to claim 1 , wherein a signal is inputted/outputted via said first and second electrodes and said dielectric material.

3. The connecting structure according to claim 2 , wherein said signal includes an information-carrying signal.

4. The connecting structure according to claim 1 , said dielectric material comprising:

one of tantalum oxide, barium titanate, PZT, silicon oxyfluoride, Polyimide, FR4 (Flame Resistant 4) and FR5 (Flame Resistant 5).

5. The connecting structure according to claim 1 , wherein:

a dielectric constant of said dielectric material is substantially greater than 4;

a diameter of said first and second electrodes is substantially 1 mm; and a distance between said first and second electrodes is substantially 10 μm.

6. A printed substrate, comprising:

said connecting structure of claim 1 .

7. A circuit, comprising:

said connecting structure of claim 1 .

8. A circuit package, comprising:

a circuit that includes said first electrode of claim 1 ;

a printed substrate that includes said second electrode of claim 1 ; and

said dielectric material of claim 1 .

9. The circuit package according to claim 8 , wherein said printed substrate includes said second electrode and said dielectric material of said connecting structure in an inner layer portion of said printed substrate.

10. The circuit package according to claim 8 , wherein said circuit includes said first electrode and said dielectric material of said connecting structure formed in an inner layer portion of said circuit.

11. The circuit package according to claim 8 , wherein said circuit includes said first electrode and said dielectric material of said connecting structure, formed externally of said circuit.

12. The circuit package according to claim 8 , further comprising:

a reinforcing member that reinforces a connection between said circuit and said printed substrate.

13. The circuit package according to claim 12 , wherein said reinforcing member is disposed in a region other than a region in which said first electrode is disposed.

14. The circuit package according to claim 8 , further comprising:

a height control member that controls a distance between said circuit and said printed substrate.

15. The circuit package according to claim 14 , wherein said height control member is disposed in a region other than a region in which said first electrode is disposed.

16. The circuit package according to claim 8 , wherein a connection between said circuit and said printed substrate includes a flip-chip connection.

17. A method of forming a connecting structure, comprising:

providing a first electrode on a circuit;

providing a second electrode on an electronic component, said second electrode comprising an input/output end of said electronic component, and said second electrode being located at a substantially overlapped position with respect to said first electrode, so that said circuit and said electronic component are electrically connected with each other without an intervening wiring therebetween;

interposing a dielectric material between said first electrode and said second electrode; and

connecting said dielectric material directly to said first and second electrodes.

18. The method according to claim 17 , said dielectric material comprising:

one of tantalum oxide, barium titanate, PZT, silicon oxyfluoride, Polyimide, FR4 (Flame Resistant 4) and FR5 (Flame Resistant 5).

19. The method according to claim 17 , wherein said dielectric material forms a capacitor for allowing indirect current flow between said first and second electrodes.