Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.
1. A semiconductor device, comprising:
a semiconductor substrate having an upper surface;
a groove formed in the semiconductor substrate;
a gate insulating film formed on an inner wall of the groove;
a gate electrode having a first portion formed on the gate insulating film in the groove and a second portion that protrudes from the first portion to such a level that is higher than the upper surface of the semiconductor substrate;
a side wall insulating film for covering the lateral face of the second portion of the gate electrode; and
an epitaxial layer formed on the upper surface of the semiconductor substrate adjacent to the side wall insulating film,
wherein the epitaxial layer comprises an upper layer and a lower layer,
the upper layer includes a source/drain region, and
the lower layer includes a first LDD region that is lower in impurity concentration than the source/drain region.
2. The semiconductor device as claimed in claim 1 further comprises a second LDD region in contact with the first LDD region and formed near the surface of the semiconductor substrate.
3. The semiconductor device as claimed in claim 1 , wherein a gate insulating film is formed under the side wall insulating film.
4. The semiconductor device as claimed in claim 1 , wherein the source/drain region and the first LDD region are arranged in a direction substantially orthogonal to the substrate surface of the semiconductor substrate.
5. The semiconductor device as claimed in claim 1 , wherein the source/drain region and the gate insulating film are separated by at least the first LDD region.
6. The semiconductor device as claimed in claim 2 , wherein the source/drain region and the gate insulating film are separated by the first and second LDD regions.
7. A semiconductor device, comprising:
a semiconductor layer having an upper surface;
a groove formed in the semiconductor layer;
a gate insulating film formed on an inner wall of the groove;
a gate electrode having a first portion formed on the gate insulating film in the groove and a second portion that protrudes from the first portion to such a level that is higher than the upper surface of the semiconductor layer;
an insulating film covering a lateral face of the second portion of the gate electrode in contact with a first part of the upper surface of the semiconductor layer; and
an epitaxial layer formed on a second part of the upper surface of the semiconductor layer in contact with a lateral face of the insulating film, the insulating film being between the epitaxial layer and the second portion of the gate electrode, wherein:
the epitaxial layer comprises an upper layer and a lower layer that is between the upper layer and the second part of the upper surface of the semiconductor layer, the upper layer being in contact with a part of the lateral face of the insulating layer and the lower layer being in contact with another part of the lateral face of the insulating layer,
the upper layer includes a source/drain region, and
the lower layer includes a first LDD region that is lower in impurity concentration than the source/drain region.
8. The device as claimed in claim 7 further comprising a second LDD region formed in the semiconductor layer, the second LDD region including the first and second portions of the semiconductor layer.