Plasma processing apparatus
View Patent ↗A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
1. A plasma processing apparatus, comprising:
a processing chamber having a vacuum, a gas being supplied to said processing chamber;
a support electrode provided inside said processing chamber and supporting a processing-target object;
an introduction window disposed on an upper side of the processing chamber through which a μ-wave is introduced into the processing chamber;
a cavity unit disposed above the introduction window such that a bottom surface thereof contacts the introduction window;
a circular waveguide connected to an upper surface of the cavity unit and extending substantially vertically, the circular waveguide being configured to propagate the μ-wave into the cavity unit and toward the introduction window;
a reflection suppressor coupled to the circular waveguide for suppressing a reflective wave propagated upward into the circular waveguide, the reflection suppressor comprising a chamber having a larger diameter than that of the circular waveguide;
a tuning box disposed above and connected to said reflection suppressor; and
two μ-wave waveguides connected to said tuning box and disposed such that each of the two p-wave waveguides have axes that are on a flat plane which is substantially parallel to said tuning box or perpendicular to an axis of said waveguide and are set with an angle of substantially 90° therebetween, said two μ-wave waveguides introducing said μ-waves which are set a phase difference therebetween of substantially 90° in respective electric fields from said two directions to said tuning box,
wherein said tuning box superimposes said respective μ-wave and generates a circularly polarized wave in a predetermined mode that is propagated inside the circular waveguide toward the introduction window.
2. A plasma processing apparatus, comprising:
a processing chamber having a vacuum, a gas being supplied to said processing chamber;
a support electrode provided inside said processing chamber and supporting a processing-target object;
an introduction window disposed on an upper side of the processing chamber through which a μ-wave is introduced into the processing chamber;
a cavity unit disposed above the introduction window such that a bottom surface thereof contacts the introduction window;
a circular waveguide connected to an upper surface of the cavity unit and extending substantially vertically, the circular waveguide being configured to propagate the μ-wave into the cavity unit and toward the introduction window;
a reflection suppressor coupled to the circular waveguide for suppressing a reflective wave propagated upward into the circular waveguide, the reflection suppressor comprising a chamber having a larger diameter than that of the circular waveguide;
a tuning box disposed above and connected to said reflection suppressor; and
a plurality of μ-wave waveguides which are connected to said tuning box and disposed such that each of the plurality of μ-wave waveguides have axes that are on a flat plane which is substantially parallel to said tuning box or perpendicular to an axis of said waveguide, said plurality of p-wave waveguides introducing said μ-waves from different directions respectively to said tuning box,
wherein said tuning box superimposes said respective μ-waves and generates a circularly polarized wave in a predetermined mode that is propagated inside the circular waveguide toward the introduction window, and
wherein said μ-wave is introduced from n (>2) directions, with an angle of substantially 360/n° set between said respective introduction directions, and with a phase difference of substantially 360/n° being set between said respective electric fields.
3. The plasma processing apparatus according to claim 1 or 2 , wherein each of said μ-wave waveguides has a rectangular shape and is capable of modifying intensities of said μ-wave thereinside.
4. The plasma processing apparatus according to claim 1 or 2 , wherein each of said μ-wave waveguides has a rectangular shape, and electric power is fed to each of said μ-wave waveguides by a single power-feeding unit.
5. The plasma processing apparatus according to claim 1 or 2 , wherein a higher order mode of μ-wave is generated inside the reflection suppressor.