Methods and apparatus for a semiconductor device package with improved thermal performance
View Patent ↗A package assembly 200 includes a semiconductor die (e.g., an RF power amplifier) 208 fixed within the cavity of a conductive leadframe 204 using a thermally and electrically-conductive adhesive material 209 . The semiconductor die 209 has a first side and a second side, wherein the first side includes at least one active area, and the second side includes at least one contact region. The conductive leadframe (e.g., a copper leadframe) 204 has two planar surfaces and a cavity formed therein. The adhesive material 209 is configured to couple the semiconductor die 208 within the cavity of the conductive leadframe 204 such that the first side of the semiconductor die is substantially coplanar with the first surface of the conductive leadframe.
1. A method of forming a package assembly comprising:
providing a semiconductor die including a first side, a second side, and sidewalls extending between the first side and the second side, wherein the first side includes at least one active area, and the second side includes at least one ground contact region;
providing a heat spreader including a cavity formed therein and including a first surface and a second surface, wherein the first surface of the heat spreader includes an opening to the cavity;
after providing the heat spreader, placing the die within the cavity of the heat spreader such that the first side of the semiconductor die is substantially coplanar with the first surface of the heat spreader;
after providing the heat spreader, dispensing a thermally-conductive and electrically-conductive adhesive material within the cavity to couple the ground contact region of the semiconductor die to the heat spreader, wherein the adhesive material encompasses the second side and the sidewalls of the semiconductor die, and the adhesive material, when cured, has a first surface that is substantially coplanar with the first surface of the heat spreader and the first side of the semiconductor die; and
after dispensing the adhesive material, attaching the first side of the die and the first surface of the heat spreader to a first side of a planar structure including one or more connected thermal vias formed therein such that the one or more connected thermal vias are positioned to contact the first surface of the heat spreader and to extend through the planar structure to provide a thermal conduction path from the at least one ground contact region, through the thermally-conductive and electrically-conductive adhesive material, through the heat spreader, and through the one or more connected thermal vias to a bottom surface of the planar structure.
2. The method of claim 1 , wherein the planar structure includes a plurality of build-up circuits.
3. The method of claim 1 , wherein providing the heat spreader includes providing a heat spreader comprising a copper alloy.
4. The method of claim 1 , wherein providing the heat spreader includes providing a heat spreader having a surface area that is greater than approximately 1.5 times the surface area of the semiconductor die.
5. The method of claim 4 , wherein the cavity has sides beveled outward toward the first surface of the heat spreader.
6. The method of claim 1 , wherein providing the heat spreader includes providing a heat spreader having a cavity that has a shape substantially corresponding to a shape of the semiconductor die.
7. The method of claim 1 , wherein providing the semiconductor die includes providing an RF power amplifier.
8. The method of claim 1 , wherein the thermally-conductive and electrically-conductive adhesive material is a material selected from a group that includes a silver-filled epoxy and a solder material.
9. The method of claim 1 , wherein the thermally-conductive and electrically-conductive adhesive material is a material having a thermal conductivity greater than 1.0 W/mK.
10. The method of claim 9 , wherein the thermally-conductive and electrically-conductive adhesive material is a material having a thermal conductivity greater than 2.0 W/mK.